1
Evren Eryurek, Jogesh Warrior, Andrew T Patten: Resistance based process control device diagnostics. Micro Motion, Rosemount, Judson K Champlin, Westman Champlin & Kelly, September 10, 2002: US06449574 (55 worldwide citation)

A device in a process control system includes an electrical element which has a resistance. Self heating circuitry coupled to the element provides a self heating signal related to the resistance of the element. Diagnostic circuitry provides a diagnostic output as a function of the self heating signa ...


2
Partick Dobrowski, Jon Westbrock, Kenneth L Holladay: Interface for managing process. Rosemount, Judson K Champlin, Westman Champlin & Kelly, December 11, 2001: US06330517 (42 worldwide citation)

An improved interface is established between a field management system and a calibrator for calibrating a process device to provide increased efficiency. The interface includes a communication module for communicating with the calibrator in accordance with a calibrator-specific protocol and a transl ...


3
Charles G Huss, Kenneth J Freeman: Air data transducer. Judson K Champlin, Richard A Romanchik, November 8, 1994: US05362243 (20 worldwide citation)

An air data module connector and filter that provides a shielded housing 12 for supporting a standard air data signal carrying cable connector 22 on an exterior wall thereof, and having an access opening that has a cover plate 34 on an opposite wall from the mounting wall for the connector. The cove ...


4
Thomas J Miller, Michael A Haase, Paul F Baude, Michael D Pashley: Be-containing II-VI blue-green laser diodes. Minnesota Mining and Manufacturing Company, Judson K Champlin, Lorraine R Sherman, October 6, 1998: US05818859 (7 worldwide citation)

A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of ...


5
Michael A Haase, Paul F Baude: Light absorbing layer for II-VI semiconductor light emitting devices. 3M Innovative Properties Company, Judson K Champlin, Philip Y Dahl, Charles L Dennis II, October 5, 1999: US05963573 (5 worldwide citation)

A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The light absorbing layer absorbs extraneous rad ...


6
Michael A Haase, Paul F Baude, Thomas J Miller: Selective etch for II-VI semiconductors. 3M Innovative Properties Company, Judson K Champlin, Charles L Dennis II, May 2, 2000: US06058123 (4 worldwide citation)

A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant dev ...


7
Michael A Haase, Paul F Baude, Thomas J Miller: Selective etch method for II-VI semiconductors. Minnesota Mining and Manufacturing Company, Judson K Champlin, Lorraine R Sherman, Philip Y Dahl, November 10, 1998: US05834330 (3 worldwide citation)

A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant dev ...


8
Fen Ren Chien, Michael A Haase, Thomas J Miller: Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device. Minnesota Mining and Manufacturing Company, Judson K Champlin, Lorraine R Sherman, June 16, 1998: US05767534 (3 worldwide citation)

A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate ...


9
Thomas J Miller: II-VI semiconductor device with BeTe buffer layer. 3M Innovative Properties Company, Judson K Champlin, Lucy C Weiss, July 6, 2004: US06759690 (2 worldwide citation)

A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provid ...


10
Kevin I Bertness: Energy management system for automotive vehicle. Judson K Champlin, Westman Champlin & Kelly, February 6, 2003: US20030025481-A1 (2 worldwide citation)

A battery monitor is provided for use with a battery of an automotive vehicle. The battery monitor can provide real time battery condition measurements and can selectively control the charging of the battery through an alternator of the vehicle based upon the measured battery condition.