Wei Liu, Thorsten B Lill, David S L Mui, Christopher Dennis Bencher: Method for fabricating a gate structure of a field effect transistor. Applied Materials, Moser Patterson & Sheridan, Joseph Bach, August 2, 2005: US06924191 (282 worldwide citation)

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The ...

Yves Pierre Boiteux, Hui Chen, Ivano Gregoratto, Chang Lin Hsieh, Hoiman Hung, Sum Yee Betty Tang: Etch process for dielectric materials comprising oxidized organo silane materials. Joseph Bach, Albert J Dalhuisen, July 13, 2004: US06762127 (189 worldwide citation)

The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH

Ajay Kumar, Padmapani C Nallan, Anisul Khan, Dragan V Podlesnik: Method for dicing a semiconductor wafer. Applied Materials, Joseph Bach, Moser Patterson & Sheridan, November 4, 2003: US06642127 (180 worldwide citation)

A method and apparatus for dicing a semiconductor wafer using a plasma etch process. The method begins by applying a patterned mask to the integrated circuits on a wafer. The pattern covers the circuits and exposes the streets between the dice. Next, the method deposits a uniform layer of adhesive m ...



Jingbao Liu, Judy Wang, Takehiko Komatsu, Bryan Y Pu, Kenny L Doan, Claes Bjorkman, Melody Chang, Yunsang Kim, Hongching Shan, Ruiping Wang: Etch method using a dielectric etch chamber with expanded process window. Applied Materials, Joseph Bach Michaelson and Wallace, June 11, 2002: US06403491 (167 worldwide citation)

A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanat ...

Chun Yan, Gary C Hsueh, Yan Ye, Diana Xiaobing Ma: Method for etching low k dielectrics. Applied Materials, Shirley L Church, Joseph Bach, April 15, 2003: US06547977 (146 worldwide citation)

The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen oth ...

Dedi David Haziza: Integrated waveguide cavity antenna and reflector dish. Dedi David Haziza, Nixon Peabody, Joseph Bach Esq, June 3, 2014: US08743004 (143 worldwide citation)

A feed assembly for a parabolic dish reflector is described. The feed assembly includes a waveguide cavity locatable at the focal point, or any other desired off-boresight location corresponding point, of the parabolic dish, at least one first radiating element optimized for operation at a first fre ...

Hoiman, Joseph P Caulfield, Hongqing Shan, Ruiping Wang, Gerald Z Yin: Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window. Applied Materials, Charles S Guenzer, Joseph Bach, August 5, 2003: US06602434 (142 worldwide citation)

An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free ...