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Wei Liu, Thorsten B Lill, David S L Mui, Christopher Dennis Bencher: Method for fabricating a gate structure of a field effect transistor. Applied Materials, Moser Patterson & Sheridan, Joseph Bach, August 2, 2005: US06924191 (282 worldwide citation)

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The ...


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Yves Pierre Boiteux, Hui Chen, Ivano Gregoratto, Chang Lin Hsieh, Hoiman Hung, Sum Yee Betty Tang: Etch process for dielectric materials comprising oxidized organo silane materials. Joseph Bach, Albert J Dalhuisen, July 13, 2004: US06762127 (189 worldwide citation)

The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH


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Ajay Kumar, Padmapani C Nallan, Anisul Khan, Dragan V Podlesnik: Method for dicing a semiconductor wafer. Applied Materials, Joseph Bach, Moser Patterson & Sheridan, November 4, 2003: US06642127 (180 worldwide citation)

A method and apparatus for dicing a semiconductor wafer using a plasma etch process. The method begins by applying a patterned mask to the integrated circuits on a wafer. The pattern covers the circuits and exposes the streets between the dice. Next, the method deposits a uniform layer of adhesive m ...


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Jingbao Liu, Judy Wang, Takehiko Komatsu, Bryan Y Pu, Kenny L Doan, Claes Bjorkman, Melody Chang, Yunsang Kim, Hongching Shan, Ruiping Wang: Etch method using a dielectric etch chamber with expanded process window. Applied Materials, Joseph Bach Michaelson and Wallace, June 11, 2002: US06403491 (167 worldwide citation)

A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanat ...


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Chun Yan, Gary C Hsueh, Yan Ye, Diana Xiaobing Ma: Method for etching low k dielectrics. Applied Materials, Shirley L Church, Joseph Bach, April 15, 2003: US06547977 (146 worldwide citation)

The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen oth ...


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Dedi David Haziza: Integrated waveguide cavity antenna and reflector dish. Dedi David Haziza, Nixon Peabody, Joseph Bach Esq, June 3, 2014: US08743004 (143 worldwide citation)

A feed assembly for a parabolic dish reflector is described. The feed assembly includes a waveguide cavity locatable at the focal point, or any other desired off-boresight location corresponding point, of the parabolic dish, at least one first radiating element optimized for operation at a first fre ...


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Hoiman, Joseph P Caulfield, Hongqing Shan, Ruiping Wang, Gerald Z Yin: Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window. Applied Materials, Charles S Guenzer, Joseph Bach, August 5, 2003: US06602434 (142 worldwide citation)

An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free ...


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