1
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1049 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


2
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (773 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


3
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, June 17, 1997: US05639698 (282 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


4
Shunpei Yamazaki, Yasuhiko Takemura: Electro-optical device having silicon nitride interlayer insulating film. Semiconductor Energy Laboratory Company, Jeffrey L Costellia, Nixon Peabody, March 6, 2001: US06198133 (263 worldwide citation)

Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semi ...


5
Shunpei Yamazaki: Semiconductor device. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, December 31, 2002: US06501098 (261 worldwide citation)

The gate electrode of a crystalline TFT is constructed as a clad structure which consists of a first gate electrode, a second gate electrode and a third gate electrode, thereby to enhance the thermal resistance of the gate electrode. Besides, an n-channel TFT is provided with a low-concentration imp ...


6
Shunpei Yamazaki: Semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, December 9, 1997: US05696386 (253 worldwide citation)

A method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a coating consisting mainly of aluminum nitride, semiconductor devices such as TFTs or semiconductor integrated circuits comprising said semiconductor devices are built directly or indirec ...


7
Hongyong Zhang, Satoshi Teramoto: Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, January 30, 1996: US05488000 (247 worldwide citation)

Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si ...


8
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga: Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, February 18, 1997: US05604360 (214 worldwide citation)

Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irr ...


9
Shunpei Yamazaki, Yasuyuki Arai: Light-emitting device and display device. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, August 12, 2003: US06605826 (206 worldwide citation)

Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are ...


10
Satoshi Teramoto: Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, April 15, 1997: US05620910 (202 worldwide citation)

In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made t ...



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