41
John H Shadduck: Instruments and techniques for inducing neocollagenesis in skin treatments. AQ Technologies, James F Hann, Haynes Beffel& Wolfeld, May 14, 2002: US06387103 (52 worldwide citation)

A system for atraumatic removal of skin surface layers in a treatment to induce neocollagenesis in the dermis to reduce wrinkles and alter the architecture of the dermal layers. A preferred embodiment of the inventive system comprises (i) a hand-held instrument with a resilient floating skin interfa ...


42

43
Jefferson G Shingleton, Thomas L Dinwoodie, Gianluigi Mascolo: Modular shade system with solar tracking panels. Sunpower Corporation Systems, James F Hann, Haynes Beffel & Wolfeld, July 7, 2009: US07557292 (49 worldwide citation)

A modular shade system with solar tracking panels includes a series of generally North-South oriented, spaced apart torque tubes, each torque tube having an axis, a series of panels mounted to at least some of the torque tubes to create spaced-apart rows of panels along the torque tubes, at least so ...


44

45
John H Shadduck, James A Baker: Instruments and techniques for inducing neocollagenesis in skin treatments. AQ Technologies, James F Hann, Haynes Beffel & Wolfeld, October 9, 2001: US06299620 (46 worldwide citation)

A system for atraumatic removal of skin surface layers in a treatment to induce neocollagenesis in the dermis to reduce wrinkles and alter the architecture of the dermal layers. A preferred embodiment of the inventive system comprises (i) a hand-held instrument with a resilient working skin interfac ...


46

47
Wei Chih Chien, Kuo Pin Chang, Erh Kun Lai, Kuang Yeu Hsieh: Resistive memory structure with buffer layer. Macronix International, James F Hann, Haynes Beffel & Wolfeld, August 17, 2010: US07777215 (41 worldwide citation)

A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device c ...


48
Hsiang Lan Lung: Memory cell sidewall contacting side electrode. Macronix International, James F Hann, Haynes Beffell & Wolfeld, August 4, 2009: US07569844 (40 worldwide citation)

A memory cell includes a memory cell layer over a memory cell access layer. The memory cell access layer comprises a bottom electrode. The memory cell layer comprises a dielectric layer and a side electrode at least partially defining a void with a memory element therein. The memory element comprise ...


49
Hsiang Lan Lung: Memory cell device with circumferentially-extending memory element. Macronix International, James F Hann, Haynes Beffel & Wolfeld, March 17, 2009: US07504653 (37 worldwide citation)

A memory cell device, including a memory material switchable between electrical property states by the application of energy, has bottom and top electrode members and a dielectric material between the two. The bottom and top electrode members have outer, circumferentially-extending surfaces aligned ...


50
John H Shattuck, Bruno Strul: Photoionization enabled electrochemical material removal techniques for use in biomedical fields. James F Hann, Haynes Beffel & Wolfeld, May 14, 2002: US06387088 (34 worldwide citation)

A method for controlled removal of surface tissue layer portions with a non-contact energy delivery modality that applies electrical energy to the targeted tissue surface to cause electrochemical ablation. The system provides (i) a UV energy source for irradiating a beam path through a selected neut ...