1
Chi Chen Cho, Bruce E Gnade, Douglas M Smith: Porous dielectric material with improved pore surface properties for electronics applications. Texas Instruments Incorporated, James E Harris, Richard L Donaldson, Richard A Stoltz, April 2, 1996: US05504042 (140 worldwide citation)

This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a re ...


2
Scott R Summerfelt: Conductive exotic-nitride barrier layer for high-dielectric-constant materials. Texas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, April 2, 1996: US05504041 (131 worldwide citation)

A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti--A--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material lay ...


3
Manoj K Jain: Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO.sub.2 films. Texas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, February 27, 1996: US05494854 (81 worldwide citation)

A semiconductor device and process for making the same are disclosed which uses a dielectric stack to improve fabrication throughput, gap-fill, planarity, and within-wafer uniformity. A gap-fill dielectric layer 34 (which preferably contains an integral seed layer) is first deposited over conductors ...


4
Somsubhra Sikdar: High-speed router switching architecture. Force10 Networks, James E Harris, October 2, 2007: US07277425 (75 worldwide citation)

A high-speed router and method for operation of the core of such a router are disclosed. The disclosure describes switching packet data through a router core serving core ingress and egress ports. The router maintains at least one always-up ingress serial link from each core ingress port to the rout ...


5
Robert H Havemann: Method of fabricating a self-aligned contact using organic dielectric materials. Texas Instruments Incorporated, James E Harris, Richard L Donaldson, Richard A Stoltz, January 9, 1996: US05482894 (69 worldwide citation)

A semiconductor device and process for making the same are disclosed which incorporate organic dielectric materials to form self-aligned contacts (SACTs) reliably, even in deep, narrow gaps. In one embodiment, conductors 26 with insulating conductor caps 28 are formed over a silicon substrate 20 wit ...


6
Manoj K Jain: Mechanical scrubbing for particle removal. Taxas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, September 3, 1996: US05551986 (57 worldwide citation)

A method and apparatus for removing particulate contaminants from a semiconductor wafer are disclosed. A wafer 10 is held in a wafer holder 12 at cleaning station 14. Cleaning station 14 has a rinse fluid supply system 18 which supplies, e.g. deionized water, to the wafer surface during particle rem ...


7
Scott R Summerfelt, Howard R Beratan: Semiconductor structures using high-dielectric-constant materials and an adhesion layer. Texas Instruments Incorporated, James E Harris, James C Kesterson, Richard L Donaldson, March 18, 1997: US05612574 (56 worldwide citation)

A semiconductor device (10) is illustrated, which is formed on an active region (14) of a semiconductor substrate (12). Device (10) comprises a conductive plug (20) and a barrier layer (22) formed in an opening in an interlevel isolation layer (18). An inner electrode (24) is caused to adhere to the ...


8
Scott R Summerfelt: Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes. Texas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, October 21, 1997: US05679980 (53 worldwide citation)

A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti-Al-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material laye ...


9
Bruce E Gnade, Chih Chen Cho, Douglas M Smith: Porous composites as a low dielectric constant material for electronics applications. Texas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, October 1, 1996: US05561318 (51 worldwide citation)

This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying and gelling one or more solutions between and over conductors 24 and drying the wet gel to create at least porous dielectric sublayers 28 and 29 ...


10
Robert H Havemann, Bruce E Gnade, Chih Chen Cho: Porous dielectric material with a passivation layer for electronics applications. Texas Instruments Incorporated, James E Harris, Richard A Stoltz, Richard L Donaldson, August 26, 1997: US05661344 (47 worldwide citation)

A semiconductor device and process for making the same are disclosed which use porous dielectric materials to reduce capacitance between conductors, while allowing conventional photolithography and metal techniques and materials to be used in fabrication. In one structure, patterned conductors 18 ar ...