51
Amitava Chatterjee, Wei William Lee, Greg A Hames, Quzhi He, Iqbal Ali, Maureen A Hanratty: Method of forming a transistor having an improved sidewall gate structure. Texas Instruments Incorporated, Jacqueline J Garner, Wade James Brady III, Richard L Donaldson, September 12, 2000: US06117741 (57 worldwide citation)

A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel region (20). A gate insulation (36) may be adjacent the channel region (20) of the semiconductor substrate ...


52
John Lin: LDMOS transistors and methods for making the same. Texas Instruments Incorporated, Jacqueline J Garner, W James Brady III, Frederick J Telecky Jr, May 31, 2005: US06900101 (53 worldwide citation)

LDMOS transistor devices and fabrication methods are provided, in which additional dopants are provided to region of a substrate near a thick dielectric between the channel and the drain to reduce device resistance without significantly impacting breakdown voltage. The extra dopants are added by imp ...


53
Brynne K Bohannon, Daniel J Syverson: Metal selective polymer removal. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, September 20, 1994: US05348619 (52 worldwide citation)

A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.


54
Michael F Chisholm, Andrew T Appel: Compact system and method for chemical-mechanical polishing utilizing energy coupled to the polishing pad/water interface. Texas Instruments Incorporated, Jacqueline J Garner, Jim Brady, Richard L Donaldson, June 4, 1996: US05522965 (52 worldwide citation)

A compact system and method for chemical-mechanical polishing. A polishing pad (114) is attached to a non-rotating platen (112) and used to polish a wafer (116). Rotating arm (118) positions the wafer (116) over the pad (114) and applies pressure. Energy (e.g. ultrasonic) is coupled from device (122 ...


55
Satwinder Malhi: High-performance high-voltage device structures. Texas Instruments Incorporated, Jacqueline J Garner, W James Brady III, Richard L Donaldson, March 31, 1998: US05734180 (52 worldwide citation)

An improved high-voltage device structure (10, 50, or 60) is a hybrid silicon-based/non-silicon-based power device that has a low R.sub.ds(on) relative to devices formed using only a silicon substrate and includes control circuit (14, 14', or 14") formed on silicon substrate region (12 or 62). High- ...


56
Girish Dixit, Anthony Konecni: Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films. Texas Instruments Incorporated, Jacqueline J Garner, W James Brady III, Frederick J Telecky Jr, March 12, 2002: US06355558 (52 worldwide citation)

A metallization structure, and associated method, for filling contact and via apertures to significantly reduce the occurrence of microvoids and provide desirable grain orientation and texture. A modified barrier structure is set forth for contact apertures, and a modified liner structure is set for ...


57
John W Fattaruso: Digital to analog converter for sigma delta modulator. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, April 19, 1994: US05305004 (51 worldwide citation)

A second order sigma delta modulator (10) includes a digital to analog converter (26) that provides feedback for system modulation. The digital to analog converter (26) employs a dynamic element matching circuit (72) which randomly selects among main capacitors (C.sub.j) to reduce the effect of capa ...


58
Sean O Brien: Particle removal in supercritical liquids using single frequency acoustic waves. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, June 4, 1996: US05522938 (51 worldwide citation)

A method and apparatus for particle removal in supercritical fluids using a single frequency acoustic wave. A wafer (114) is placed in a process chamber (110) and cleaning gas is introduced through inlet port (116). The cleaning fluid is heated to at least the critical temperature of the cleaning fl ...


59
Hiep Van Tran: CMOS driver which uses a higher voltage to compensate for threshold loss of the pull-up NFET. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, March 21, 1995: US05399920 (50 worldwide citation)

The low-power two-stage data output buffer (20,70) includes a two-stage switching circuit (50, 72) that drives an n-channel pull-up transistor (24) in two stages, thus only using current from the pumped high voltage supply during the second stage of the operation. The two-stage switching circuit (50 ...


60
Jiong Ping Lu, Chih Chen Cho: Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures. Texas Instruments Incorporated, Jacqueline J Garner, Wade James Brady, Richard L Donaldson, June 15, 1999: US05913145 (50 worldwide citation)

In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium is formed on the patterned substrate. A layer of tungsten nitride is formed on the titanium layer. After an annealing step, an interfacial layer and a layer of titanium nitride are formed between the substrat ...