1
Samuel E Blum, Rangaswamy Srinivasan, James J Wynne: Far ultraviolet surgical and dental procedures. International Business Machines Corporation, Jackson E Stanland, November 15, 1988: US04784135 (220 worldwide citation)

A method and apparatus are described for photoetching organic biological matter without requiring heat as the dominant etching mechanism. Far-ultraviolet radiation of wavelengths less than 200 nm are used to selectively remove organic biological material, where the radiation has an energy fluence su ...


2
Samuel E Blum, Karen H Brown, Rangaswamy Srinivasan: Far UV patterning of resist materials. International Business Machines Corporation, Jackson E Stanland, November 8, 1983: US04414059 (144 worldwide citation)

A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photode ...


3
Bernard S Meyerson, Rajiv V Joshi, Robert Rosenberg, Vishnubhai V Patel: Silicon/carbon protection of metallic magnetic structures. International Business Machines Corporation, Jackson E Stanland, March 3, 1987: US04647494 (116 worldwide citation)

A superior wear-resistant coating is provided for metallic magnetic recording layers, where the improved coating is a hard carbon layer that is strongly bound to the underlying metallic magnetic recording layer by an intermediate layer of silicon. The silicon layer can be very thin, with a minimum t ...


4
Bernard Steele Meyerson: Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers. International Business Machines Corporation, Robert M Trepp, Jackson E Stanland, May 25, 1999: US05906680 (112 worldwide citation)

A method and apparatus for depositing single crystal, epitaxial films of silicon on a plurality of substrates in a hot wall, isothermal deposition system is described. The deposition temperatures are less than about 800.degree. C., and the operating pressures during deposition are such that non-equi ...


5
John J Donelon, Yaffa Tomkiewicz, Thomas A Wassick, James T Yeh: Selective metal etching in metal/polymer structures. International Business Machines Corporation, Jackson E Stanland, August 4, 1987: US04684437 (96 worldwide citation)

A differential material removal process wherein a selected material can be rapidly removed without adverse impact to surrounding layers of different materials. Ultraviolet radiation is used to selectively remove metal without adversely harming adjacent polymer layers, in a metal-polymer multilayer s ...


6
Joseph M Jasinski, Bernard S Meyerson, Bruce A Scott: Low pressure chemical vapor deposition of tungsten silicide. International Business Machines Corporation, Jackson E Stanland, August 4, 1987: US04684542 (89 worldwide citation)

A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrat ...


7
James K Gimzewski, Wolfgang D Pohl: Scanning tunneling microscope. International Business Machines Corporation, Jackson E Stanland, May 26, 1987: US04668865 (87 worldwide citation)

An improved scanning tunneling microscope comprising a semiconductor chip into which slots are etched to form a central portion linked by a first pair of stripes to an intermediate portion, which in turn is linked by a second pair of stripes to the main body of the chip. The pairs of stripes have mu ...


8
Samuel E Blum, Karen L Holloway, Rangaswamy Srinivasan: Patterning of polyimide films with far ultraviolet light. International Business Machines Corporation, Jackson E Stanland, February 4, 1986: US04568632 (80 worldwide citation)

A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000.ANG. of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power de ...


9
Wolfgang D Pohl: Optical near-field scanning microscope. International Business Machines Corporation, Jackson E Stanland, August 5, 1986: US04604520 (79 worldwide citation)

This optical near-field scanning microscope comprises an "objective" (aperture) attached to the conventional vertical adjustment appliance and consisting of an optically transparent crystal having a metal coating with an aperture at its tip with a diameter of less than one wavelength of the light us ...


10
Barry D Goodman, James J Wynne, Hershall W Kaufman, Jason M Jacobs: Dental procedures and apparatus using ultraviolet radiation. International Business Machines Corporation, Jackson E Stanland, July 25, 1995: US05435724 (77 worldwide citation)

An improved dental procedure and apparatus where ultraviolet radiation pulses are used to etch selectively both hard tissue and soft tissue in dental procedures. There exists distinct ablation thresholds for hard and soft tissue which are dependent on the material being ablated for a given wavelengt ...