11
Mehrdad M Moslehi, Habib N Najm: Multi-point pyrometry with real-time surface emissivity compensation. Texas Instruments Incorporated, Ira S Matsil, B Peter Barndt, Richard L Donaldson, October 20, 1992: US05156461 (91 worldwide citation)

A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beam ...


12
Donald J Redwine, Mousumi Bhat, Michael Smayling: Field effect transistor with a lightly doped drain. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, September 20, 1994: US05349225 (89 worldwide citation)

A transistor device 10 formed in a semiconductor layer 12 is disclosed herein. A first source/drain region 14 is formed in the semiconductor layer 12. A second source/drain region 16 is also formed in the semiconductor layer 12 and is spaced from the first source/drain region 14 by a channel region ...


13
William F Keenan: Uncooled infrared detector and method for forming the same. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, November 22, 1994: US05367167 (85 worldwide citation)

A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber material 132, such as titanium for example, ...


14
Thomas L Polgreen, Amitava Chatterjee, Ping Yang: Low voltage triggering semiconductor controlled rectifiers. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, November 7, 1995: US05465189 (82 worldwide citation)

A new semiconductor controlled rectifier which may be used to provide on-chip protection against ESD stress applied at the input, output, power supply pins or between any arbitrary pair of pins of an integrated circuit is disclosed. The structure which has the lowest breakdown voltage for a given te ...


15
Loek J D Hont: Integrated air coil and capacitor and method of making the same. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, October 8, 1996: US05563582 (82 worldwide citation)

In one aspect, the present invention provides an integrated inductor and capacitor 20 which can be used as the inductive portion of a resonant circuit and the energy accumulator for a identification system transponder. In a first embodiment, the integrated inductor and capacitor component 20 may inc ...


16
Loek J D Hont: Air coil and method of making the same. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, January 7, 1997: US05592150 (82 worldwide citation)

In one aspect, the present invention provides an air coil 20. The air coil 20 may be made from a strip of electrically conductive material 22 which has an insulating material overlying it. For example, the conductive material may comprise copper. The strip 22 is wound into a coil to perform a plural ...


17
Allan T Mitchell, Howard L Tigelaar: Four memory state EEPROM. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, October 27, 1992: US05159570 (75 worldwide citation)

An EEPROM memory cell having sidewall floating gates (28, 28a, 28b) is disclosed. Sidewall floating gates (28, 28a, 28b) are formed on sidewalls (30, 32) of a central block (22). Spaced apart bit lines (36, 36a, 36b) are formed to serve as memory cell sources and drains. Sidewall floating gates (28a ...


18
Richard K Hester, Khen Sang Tan, Michiel de Wit: Circuit and method for tuning capacitor arrays. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, August 10, 1993: US05235335 (71 worldwide citation)

A capacitor array circuit is disclosed herein. A main capacitor array includes at least a most significant array portion 12 and a least significant array portion 14. A coupling capacitor C.sub.C is formed between the two portions of the array. Typically, one plate of the coupling capacitor C.sub.C i ...


19
Sue E Crank: Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, May 31, 1994: US05316974 (66 worldwide citation)

An improved metallized structure (10) is formed from a copper seed layer (46) and a copper structure (48). Semiconductor devices to be connected (16-18) are covered by a conductive barrier layer (20). An oxide layer (28) is then deposited over the barrier layer (20) and patterned using standard phot ...


20
Mehrdad M Moslehi: Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment. Texas Instruments Incorporated, Ira S Matsil, James C Kesterson, Richard L Donaldson, December 28, 1993: US05273609 (61 worldwide citation)

A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with th ...