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James E Jervis: Medical devices incorporating sim alloy elements. Raychem Corporation, Ira D Blecker, May 19, 1987: US04665906 (1459 worldwide citation)

Medical devices which are currently proposed to use elements made from shape memory alloys may be improved by the use of stress-induced martensite alloy elments instead. The use of stress-induced martensite decreases the temperature sensitivity of the devices, thereby making them easier to install a ...


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John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. International Business Machines Corporation, Ira D Blecker, November 28, 2006: US07141853 (170 worldwide citation)

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...


4
Corey J McMills, John S Mattis, James C Milroy: Method and apparatus for sealing a coaxial cable coupling assembly. Raychem Corporation, Dennis E Kovach, Ira D Blecker, June 23, 1987: US04674818 (170 worldwide citation)

A hollow, cylindrically shaped, elastically deformable sealant member is disposed over external threads of a mounting unit, and subsequently a driver element having internal threads matable with the external threads is screwed onto the external threads, an elasticity and inside diameter of the seala ...


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Michael P Belyansky, Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Oleg Gluschenkov: Structure and method to improve channel mobility by gate electrode stress modification. International Business Machines Corporation, Whitham Curtis & Christofferson P C, Ira D Blecker, December 20, 2005: US06977194 (153 worldwide citation)

In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nFET and pFET), carrier mobility is enhanced or otherwise regulated through the reacting the material of the gate electrode with a metal to produce a stressed alloy (preferably CoSi2, NiSi, or PdS ...


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Mary P Quin: Nickel/titanium/vanadium shape memory alloy. Raychem Corporation, Ira D Blecker, James W Peterson, Herbert G Burkard, March 19, 1985: US04505767 (139 worldwide citation)

Nickel/titanium alloys having a nickel:titanium atomic ratio between about 1:02 and 1:13 and a vanadium content between about 4.6 and 25.0 atomic percent show constant stress versus strain behavior due to stress-induced martensite in the range from about 0.degree. to 60.degree. C.


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William G Bloom, Gary I Geschwind: Bi-Polar electrocautery needle. Raychem Corporation, Ira D Blecker, James W Peterson, Herbert G Burkard, November 20, 1984: US04483338 (124 worldwide citation)

A bi-polar electrocautery needle comprising an inner electrode, an outer electrode and recoverable insulating-locking member for insulating the electrodes from one another and locking them into relative position to one another. And the method of making the bi-polar electrocautery needle in accordanc ...


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Raschid J Bezama, Jon A Casey, John B Pavelka, Glenn A Pomerantz: Method of forming a multilayer electronic packaging substrate with integral cooling channels. International Business Machines Corporation, Ira D Blecker, February 16, 1999: US05870823 (111 worldwide citation)

Disclosed is an electronic packaging substrate which includes a sintered ceramic body having at least one internal layer of wiring and at least one cooling channel internal to and integral with the sintered ceramic body for cooling a heat-generating electronic device placed on the sintered body. Als ...


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Hormazdyar Minocher Dalal, Kenneth Michael Fallon: Direct chip attach circuit card. International Business Machines Corporation, Ira D Blecker, Aziz M Ahsan, August 18, 1998: US05796591 (108 worldwide citation)

A structure and a method is disclosed for making a laminated circuit carrier card for the purpose of making a Direct Chip Attached Module (DCAM) with low cost and high reliability. The carrier is made using an organic or an inorganic laminated carrier having at least one surface available for direct ...


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John B Stewart Jr, Laszlo Szalvay, Bernard de Brunier, Jeffrey W Simpson: Annular tube-like driver. Raychem Corporation, Ira D Blecker, T Gene Dillahunty, Herbert G Burkard, January 20, 1987: US04637436 (102 worldwide citation)

Annular tube-like driver for insertion into a tube insert which in turn is inserted into a tube. The driver is made of a shape-memory alloy which is capable of placing the tube insert in firm engagement with the inside of the tube.



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