Jianping Wang: Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM). Avalanche Technology, Maryam Imam, IPxLaw Group, June 8, 2010: US07732881 (88 worldwide citation)

One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC l ...

John Wood: Rotary clock flash analog to digital converter system and method. Multigig, IPxLaw Group, October 27, 2009: US07609756 (29 worldwide citation)

System and method for converting an analog voltage to a digital signal. The system includes an input voltage sampler, a ramp generator, a comparator, a time-to-digital converter (TDC), and a multiphase oscillator, preferably a rotary traveling wave oscillator, that provides the critical system timin ...

Rajiv Yadav Ranjan, Roger Klas Malmhall: Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM). Avalanche Technology, Maryam Imam, IPxLaw Group, April 16, 2013: US08422286 (28 worldwide citation)

A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), ...

Yuchen Zhou: Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same. Avalanche Technology, Maryam Imam, IPxLAW Group, January 7, 2014: US08623452 (27 worldwide citation)

A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is ...

Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall: Method for manufacturing non-volatile magnetic memory. Avalanche Technology, Maryam Imam, IPxLAW Group, September 17, 2013: US08535952 (22 worldwide citation)

In accordance with a method of the present invention, a method of manufacturing a magnetic random access memory (MRAM) cell and a corresponding structure thereof are disclosed to include a multi-stage manufacturing process. The multi-stage manufacturing process includes performing a front end on-lin ...

John Wood: Rotary clock synchronous fabric. Multigig, IPxLaw Group, September 28, 2010: US07805697 (22 worldwide citation)

Methods for generating a design for logic circuitry using rotary traveling wave oscillators (RTWOs) are described. A plurality of RTWOs are is arranged into an array of rows and columns. Adjacent elements in the array are interconnected so that the clocks in adjacent element are phase synchronous. C ...

Richard Fetik: Firewall+storage apparatus, method and system. IPxLAW Group, Claude Hamrick, June 22, 2010: US07743260 (21 worldwide citation)

A storage firewall architecture, method and system that works in parallel with existing security technologies and, inter alia, provides application software authentication, user authentication & authorization in the execution of an application, examination, verification, and authentication of all st ...

Rajiv Yadav Ranjan, Parviz Keshtbod, Mahmud Assar: Low-cost non-volatile flash-RAM memory. Avalanche Technology, Maryam Imam, IPxLAW GROUP, February 21, 2012: US08120949 (17 worldwide citation)

A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.

Chien Cheng Tung, Thomas Edward Pare Jr: Nested preamble for multi input multi output orthogonal frequency division multiplexing. Ralink Technology Corporation, Maryam Imam, IPxLAW Group, December 21, 2010: US07856068 (17 worldwide citation)

A multi input multi output (MIMO) system for transmitting and receiving packets having a nested preamble format included in said packets and having poly-carrier long training sequence (LTS) and signal field (SIG) for training receivers, in accordance with an embodiment of the present invention. Said ...

Rajiv Yadav Ranjan, Roger Klas Malmhall, Parviz Keshtbod: Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion. Avalanche Technology, Maryam Imam, IPxLaw Group, January 11, 2011: US07869266 (15 worldwide citation)

A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction loc ...