1
Charles T Black, Ricardo Rulz, Robert L Sandstrom: Methods for forming improved self-assembled patterns of block copolymers. International Business Machines Corporation, Scully Scott Murphy & Presser PC, Ido Tuchman Esq, March 25, 2008: US07347953 (89 worldwide citation)

A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trenc ...


2
Eduard A Cartier, Matthew W Copel, Supratik Guha, Richard A Haight, Fenton R McFeely, Vijay Narayanan: Removal of charged defects from metal oxide-gate stacks. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Ido Tuchman Esq, February 10, 2009: US07488656 (71 worldwide citation)

The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carri ...


3
Guy Moshe Cohen, Paul M Solomon: Vertical FET with nanowire channels and a silicided bottom contact. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Ido Tuchman Esq, June 12, 2007: US07230286 (67 worldwide citation)

A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source and gate-drain capacitance.


4
Bruce B Doris, Meikei Ieong, Edward J Nowak, Min Yang: Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Ido Tuchman Esq, November 6, 2007: US07291886 (60 worldwide citation)

A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p ...


5
Ali Afzali Ardakani, Phaedon Avouris, Jia Chen, Christian Klinke, Paul M Solomon: Method and apparatus for solution processed doping of carbon nanotube. International Business Machines Corporation, Patterson & Sheridan, Kin Wah Tong Esq, Ido Tuchman Esq, August 7, 2007: US07253431 (46 worldwide citation)

A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device.


6
David B Mitzi, Simone Raoux: Solution-based deposition process for metal chalcogenides. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Ido Tuchman Esq, February 24, 2009: US07494841 (40 worldwide citation)

A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic de ...


7
Lia Krusin Elbaum, Rudolf Ludeke, Dennis M Newns, Simone Raoux: Method and structure for high performance phase change memory. International Business Machines Corporation, Ido Tuchman Esq, McGinn IP Law Group PLLC, May 22, 2007: US07221579 (35 worldwide citation)

A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing information in the PCM element.


8
David B Mitzi, Christopher B Murray, Dmitri V Talapin: Method for fabricating an inorganic nanocomposite. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Ido Tuchman Esq, April 14, 2009: US07517718 (33 worldwide citation)

An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing t ...


9
Joerg Appenzeller, Joachim Knoch: Method of fabricating a tunneling nanotube field effect transistor. International Business Machines Corporation, Patterson & Sheridan, Kin Wah Tong Esq, Ido Tuchman Esq, February 20, 2007: US07180107 (30 worldwide citation)

A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed up ...


10
Guy M Cohen, Hon Sum P Wong: Self-aligned double gate mosfet with separate gates. International Business Machines Corporation, Gibb I P Law Firm, Ido Tuchman Esq, September 5, 2006: US07101762 (29 worldwide citation)

A structure and method of manufacturing a double-gate integrated circuit which includes forming a laminated structure having a channel layer and first insulating layers on each side of the channel layer, forming openings in the laminated structure, forming drain and source regions in the openings, r ...