1
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. Robert M Trepp, IBM Corporation, October 31, 2002: US20020158337-A1 (4 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Ibm Corporation, Intellectual Property Law Dept, August 29, 2002: US20020119378-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


3
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Ibm Corporation, Intellectual Property Law Dept, October 16, 2003: US20030194568-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


4
Peter A. Bouchard
Peter D Bouchard SR, Tamar Ellam, Hidayatullah Habeebullah Shaikh, Ruth Edith Willenborg: Pattern-Based Development of Computer System Solutions. Ibm Corporation, April 9, 2009: US20090094576-A1

The problems that normally attend the development and deployment of a computer system solution are reduced by employing patterns and virtual images in the development and deployment process. When information had been acquired about a data processing need to be met, pattern representing a generalized ...


5
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Dr Daniel P Morris Esq, IBM Corporation, October 16, 2003: US20030194569-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


6
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. Dr Daniel P Morris Esq, IBM Corporation, January 31, 2002: US20020012876-A1

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


7
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Dr Daniel P Morris Esq, IBM Corporation, March 18, 2004: US20040053026-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


8
Eb Eshun
Eric M Coker, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Matthew D Moon, Anthony K Stamper: Integrated thin-film resistor with direct contact. Intellectual Property Law, IBM Corporation, December 20, 2007: US20070290272-A1

A BEOL thin-film resistor adapted for flexible integration rests on a first layer of ILD. The thickness of the first layer of ILD and the resistor thickness combine to match the nominal design thickness of vias in the layer of concern. A second layer of ILD matches the resistor thickness and is plan ...


9
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated beol thin film resistor. Anthony J Canale, Intellectual Property Law IBM Corporation, March 12, 2009: US20090065898-A1

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


10
Private
Robert J Dugan, John R Flanagan, Giles R Frazier, Matthew J Kalos, Louis W Ricci, Kenneth M Trowell, Harry M Yudenfriend: Transfer of error-analysis and statistical data in a fibre channel input/output system. International Business Machines Corporation, IBM Corporation, September 30, 2004: US20040193968-A1

A computer Input/Output system having a fabric, a control unit (CU) and a host computer including a channel, the channel having a channel port connected by a first link to a channel neighbor port of the fabric, and the control unit having a CU port connected by a second link to a CU neighbor port on ...