1
Astle Brian, Guiot Jean Marie: Thick film inductor with ferromagnetic core. RCA Corporation, Bruestle Glenn H, Hill William S, March 19, 1974: US3798059 (83 worldwide citation)

Thick film inductor suitable for hybrid integrated circuits comprising successive layers of powdered sintered ferromagnetic material in a cured catalyst-hardenable resin binder and a pattern of conductors comprising powdered metal in a cured catalyst-hardenable resin.


2
Comizzoli Robert Benedict: Method of selectively depositing glass on semiconductor devices. RCA Corporation, Bruestle Glenn H, Hill William S, July 15, 1975: US3895127 (24 worldwide citation)

A method which comprises depositing a charge of a selected polarity on the areas coated with insulating material of a semiconductor device having areas of 'bare' semiconductor and areas coated with insulating material, immersing the charged device in a liquid composition comprising an insulating liq ...


3
Lehmann Hans Wilhelm, Widmer Roland: Piezoelectric transducer comprising oriented zinc oxide film and method of manufacture. RCA Corporation, Bruestle Glenn H, Hill William S, November 5, 1974: US3846649 (21 worldwide citation)

A transducer capable of generating shear waves at microwave frequencies in a propagation medium, comprising an oriented polycrystalline film of zinc oxide on a substrate which is a film of zinc, In.sub.2 O.sub.3, or In.sub.2 O.sub.3 /SnO.sub.2. The zinc oxide film is deposited by rf sputtering, with ...


4
Robinson Paul Harvey, Wance Richard Oren: Method of polishing sapphire and spinel. RCA Corporation, Bruestle Glenn H, Hill William S, April 30, 1974: US3808065 (20 worldwide citation)

The (1102) crystallographic oriented surfaces of sapphire wafers and the (100) crystallographic oriented surfaces of spinel wafers are chemically polished by immersing the wafers in a melt of molten borax. For chemically polishing the sapphire wafers, the melt is heated to a temperature of between 1 ...


5
Corboy John Francis, Cullen Glenn Wherry, Pastal Nicholas: Dual growth rate method of depositing epitaxial crystalline layers. RCA, Bruestle Glenn H, Hill William S, May 20, 1975: US3885061 (17 worldwide citation)

Method of forming an epitaxial crystalline layer on a crystalline substrate by depositing a first portion at a rapid growth rate and a second portion at a slower growth rate.


6
Coleman Clyde Franklin: Method of soldering circuit components to a substrate. RCA Corporation, Bruestle Glenn H, Hill William S, July 30, 1974: US3825994 (16 worldwide citation)

A method of batch soldering components of hybrid circuits to substrates comprising advancing the substrates having mounted thereon solder paste layers or preforms on which the components are resting in unsoldered state, along a path which leads through a wave of hot, dense liquid, such that the subs ...


7
Carlson David Emil, Hang Kenneth Warren, Stockdale George Fairbank: Method of treating a glass body to provide an ion-depleted region therein. RCA Corporation, Bruestle Glenn H, Hill William S, May 21, 1974: US3811855 (16 worldwide citation)

A method that modifies the composition of a region adjacent the surface of an ion conducting glass body comprises applying an electric field, at an elevated temperature, between opposite surfaces of the glass body to remove substantially all monovalent and most divalent ions from the region. A desir ...


8
Berkman Samuel, Britt Philip Michael: Method of growing single crystals of compounds. RCA Corporation, Bruestle Glenn H, Hill William S, April 15, 1975: US3877883 (14 worldwide citation)

In growing a single crystal of a compound or an alloy composed of a plurality of compounds, having a volatile element, from a melt of the compound in a sealed ampoule, a quantity of the volatile element is provided to maintain an atmosphere of the volatile element over the melt and the temperature o ...


9
Arnold Anthony Francis: Method of electroless plating. RCA Corporation, Bruestle Glenn H, Hill William S, April 15, 1975: US3877981 (13 worldwide citation)

A thin, discontinuous film of a catalyst is deposited on a surface to be plated. The surface is rinsed with a solution which includes a wetting agent for the surface, and is then electrolessly plated with a metal.


10
Trevail Lewis Herbert, Hegarty Brian Anthony: Method of making a multiplicity of multiple-device semiconductor chips and article so produced. RCA Corporation, Bruestle Glenn H, Hill William S, December 9, 1975: US3924323 (12 worldwide citation)

A multiplicity of semiconductor devices are made in a semiconductor wafer or slice. Grooves are made in the back of the slice such that individual devices are separated. The grooves preferably do not extend completely through the slice. The grooves are then filled with resin, isolating the devices a ...