31
Reinmar Killmann: Apparatus for localizing action currents in the heart. Siemens Aktiengesellschaft, Hill & Simpson, December 8, 1998: US05846198 (112 worldwide citation)

An apparatus for localizing action currents in the heart of a living subject has electrodes for acquiring a distribution of electrical potential on the body surface of the living subject generated by the action currents, a position acquisition unit for determining the spatial position of the electro ...


32
Masaharu Hamasaki: Solid state image sensing device. Sony Corporation, Hill & Simpson, August 11, 1998: US05793423 (112 worldwide citation)

The present invention is directed to a solid state image sensing device of an amplifying type which can increase a switching speed during the horizontal scanning by making an output circuit low in impedance. In the output circuit of this amplifying type solid state image sensing device, the FET of s ...


33
Hideaki Kuroda: LDD buried channel field effect semiconductor device and manufacturing method. Sony Corporation, Hill & Simpson, November 14, 2000: US06147383 (110 worldwide citation)

An LDD-structured field-effect semiconductor device that can eliminate fluctuations in the threshold voltage caused by variations in the position of higher-density diffusion layers, thereby suppressing variations in the threshold voltage to a lower level. The junction depth of each of the lower-dens ...


34
Hideo Yamanaka: Air-packed CCD images package and a mold for manufacturing thereof. Sony Corporation, Hill & Simpson, December 7, 1999: US05998862 (109 worldwide citation)

A plastic lid having a cavity portion is put to cover a pedestal from its front-surface side to its side-surface side, the pedestal having a semiconductor chip mounted thereon. An adhesive agent is charged into a space between the plastic lid and the pedestal so as to bond the plastic lid with the p ...


35
Hermann Fischer, Franz Hofmann: CMOS integrated circuit including forming doped wells, a layer of intrinsic silicon, a stressed silicon germanium layer where germanium is between 25 and 50%, and another intrinsic silicon layer. Siemens Aktiengesellschaft, Hill & Simpson, August 29, 2000: US06111267 (108 worldwide citation)

An integrated CMOS circuit, and method for producing same, including a semiconductor substrate having a p-channel MOS transistor and an n-channel MOS transistor formed therein and having a first silicon layer, a stressed Si.sub.1-x Ge.sub.x layer and a second silicon layer which are preferably grown ...


36
Sven Gunnar Olsson, Goran Rydgren, Anders Larsson, Tarmo Niininen: Method for vaporizing an anesthetic liquid and vaporizer operating according to the method. Siemens Elema, Hill & Simpson, July 6, 1999: US05918595 (106 worldwide citation)

In a method an apparatus for vaporizing anesthetic liquids, in which a carrier gas is passed through a vaporizer so as to be saturated with vaporized anesthetic liquid, the vaporizer has a container, partially filled with anesthetic liquid, an inlet for a carrier gas, an outlet for carrier gas satur ...


37
Takashi Noguchi, Yasushi Shimogaichi: Method for fabricating thin film transistor device. Sony Corporation, Hill & Simpson, October 6, 1998: US05817548 (106 worldwide citation)

A method for crystallizing a portion of a semiconductor thin film while forming a semiconductor device comprises providing a transparent substrate supporting a metallic gate electrode and an amorphous semiconductor thin film which are separated from each other by a gate insulating film, heating the ...


38
Wilhelm Duerr, Markus Vester: Heat radiation shield, and dewar employing same. Siemens Aktiengesellschaft, Hill & Simpson, October 17, 2000: US06131396 (104 worldwide citation)

A heat radiation shield has an electrically insulating support on which a mosaic of electrically conductive elementary layers is arranged on at least one side.


39
Kenth Nilsson: Implantable medical device having an accelerometer. Pacesetter, Hill & Simpson, March 28, 2000: US06044299 (101 worldwide citation)

An implantable medical device has a housing containing an accelerometer which detects vibrations of the housing. The accelerometer generates a vibration signal in response to the detected vibrations, which is supplied to a signal processing unit. The signal processing unit generates, for each of a n ...


40
Takeshi Matsushita, Hiroshi Tayanaka: Method for separating a device-forming layer from a base body. Sony Corporation, Hill & Simpson, September 22, 1998: US05811348 (100 worldwide citation)

A porous Si layer is formed on a single-crystal Si substrate, and then a p.sup.+ -type Si layer, p-type Si layer and n.sup.+ -type Si layer which all make up a solar cell layer. After a protective film is made on the n.sup.+ -type Si layer, the rear surface of the single-crystal Si substrate is bond ...