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Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones II, April 22, 2008: US07361950 (10 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


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Robert Douglas Hempstead, Sol Krongelb, Daniel Andrew Nepela, David Allen Thompson, Erich Philipp Valstyn: Antiferromagnetic-ferromagnetic exchange bias films. International Business Machines Corporation, Graham S Jones II, July 25, 1978: US04103315 (210 worldwide citation)

In thin film magnetic transducers, e.g., inductive or magnetoresistive recording heads, at least a pair of layers of a ferromagnetic material and an antiferromagnetic material are deposited upon one another and exchange coupled to retain a unidirectional bias in the plane of the ferromagnetic materi ...


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Ying Chen Chao, Chia Hsiang Chen, Jhy Sheng Sheu: Method of automatic dummy layout generation. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, Graham S Jones II, August 4, 1998: US05790417 (209 worldwide citation)

A method is provided for producing a dummy pattern for an I.C. semiconductor device multi-layer interconnection metallurgy, having a planar global top surface with a dummy pattern for a circuit for use with conductor lines in the circuit pattern. Create a reverse pattern which is a complement of a w ...


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Allan M Hartstein, Kurt E Petersen: Micromechanical display logic and array. International Business Machines Corporation, Graham S Jones II, October 21, 1980: US04229732 (148 worldwide citation)

A display device, addressing circuitry, and semiconductor control logic are all portions of an integrated structure formed by thin film technology on a single silicon wafer. The display comprises a thin film micromechanical electrostatic form of light reflective display formed by depositing thin fil ...


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Dennis K Coultas, John H Keller: Radio frequency induction/multipole plasma processing tool. International Business Machines Corporation, Michael J Balconi Lamica, Graham S Jones II, April 19, 1994: US05304279 (140 worldwide citation)

A dry processing apparatus for plasma etching or deposition includes a chamber for plasma processing having an external wall for housing a work piece with a surface to be plasma processed. A source of an induction field is located outside the chamber on its opposite side from the work piece. A radio ...


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Shou Gwo Wuu, Jin Yuan Lee, Dun Nian Yaung, Jeng Han Lee: SRAM layout for relaxing mechanical stress in shallow trench isolation technology and method of manufacture thereof. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, Graham S Jones II, September 12, 2000: US06117722 (129 worldwide citation)

An SRAM device has STI regions separated by mesas and doped regions including source/drain regions, active areas, wordline conductors and contacts in a semiconductor substrate is made with a source region has 90.degree. transitions in critical locations. Form a dielectric layer above the active area ...


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Diane C Boyd, Judson R Holt, MeiKei Ieong, Renee T Mo, Zhibin Ren, Ghavam G Shahidi: Ultra-thin body super-steep retrograde well (SSRW) FET devices. International Business Machines Corporation, Graham S Jones II, H Daniel Schnurmann, February 21, 2006: US07002214 (120 worldwide citation)

A method of manufacture of a Super Steep Retrograde Well Field Effect Transistor device starts with an SOI layer formed on a substrate, e.g. a buried oxide layer. Thin the SOI layer to form an ultra-thin SOI layer. Form an isolation trench separating the SOI layer into N and P ground plane regions. ...


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Sherman S Wang, Michael A Wesley, Peter M Will: Asymmetric six-degree-of-freedom force-transducer system for a computer-controlled manipulator system. International Business Machines Corporation, Graham S Jones II, January 2, 1979: US04132318 (118 worldwide citation)

A computer-controlled-manipulator gripper with a set of three-degree-of-freedom force sensors on each finger having strain gauges and 90.degree. shift in orientation of the sensors includes an asymmetric, offset relationship of the location and orientation of analogous sensors on the two fingers in ...


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Liang Jie, Siang Tze Wee: Integrated circuit color chip with cells with integral color filters including triplets of photodiodes with each having integrated therewith transistors for reading from and writing to the photodiode and methods of manufacture and operation thereof. Tritech Microelectronics, George O Saile, Stephen B Ackerman, Graham S Jones II, October 17, 2000: US06133954 (108 worldwide citation)

A single integrated-circuit color camera chip is color sensitive by grouping closely-adjoining light-detecting cells in a photodiode array into triplets. Each pixel of the sensor includes both a read transistor and a write transistor. Each cells in the triplet is similar, but each cell is associated ...


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Chung Shi Liu, Chen Hua Yu, Tien I Bao, Syun Ming Jang: Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby. Taiwan Semiconductor Manufacturing Company, George O Saile, Stephen B Ackerman, Graham S Jones II, January 30, 2001: US06181013 (97 worldwide citation)

Form a dielectric layer on a surface of a conductive substrate with a trench through the top surface down to the substrate. Form a barrier layer over the dielectric layer including the exposed surface of the conductive substrate and the exposed sidewalls of the dielectric layer. Form a copper conduc ...