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Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb & Rahman, Anthony J Canale, November 27, 2007: US07301752 (4 worldwide citation)

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


2
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Rahmachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Frederick W Gibb Iii, Gibb & Rahman, January 24, 2008: US20080019077-A1

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


3
Markus T Buehler, John M Cohn, David J Hathaway, Jason D Hibbeler, Juergen Koehl: Use of redundant routes to increase the yield and reliability of a VLSI layout. International Business Machines Corporation, Gibb & Rahman, Richard M Kotulak Esq, December 11, 2007: US07308669 (160 worldwide citation)

Disclosed is a method and system for inserting redundant paths into an integrated circuit. Particularly, the invention provides a method for identifying a single via in a first path connecting two elements, determining if an alternate route is available for connecting the two elements (other than a ...


4
Brent A Anderson, Matthew J Breitwisch, Edward J Nowak: Substrate backgate for trigate FET. International Business Machines Corporation, Gibb & Rahman, August 12, 2008: US07411252 (129 worldwide citation)

Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can ...


5
Brent A Anderson, Edward J Nowak: Multiple-gate device with floating back gate. International Business Machines Corporation, Gibb & Rahman, William D Sabo Esq, August 21, 2007: US07259420 (80 worldwide citation)

Disclosed is a multiple-gate transistor that includes a channel region and source and drain regions at ends of the channel region. A gate oxide is positioned between a logic gate and the channel region and a first insulator is formed between a floating gate and the channel region. The first insulato ...


6
Marc H Cohen: Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof. MHCMOS, Mohammad S Rahman Esq, Gibb & Rahman, July 15, 2008: US07400253 (75 worldwide citation)

A system and device for harvesting various frequencies and polarizations of ambient radio frequency (RF) electromagnetic (EM) energy for making a passive sensor (tag) into an autonomous passive sensor (tag) adapted to collect and store data with time-stamping and some primitive computation when nece ...


7
Shixia Liu, Zhong Su: Visual method and apparatus for enhancing search result navigation. International Business Machines Corporation, Gibb & Rahman, March 10, 2009: US07502786 (51 worldwide citation)

A visual method for enhancing search result navigation, comprising: obtaining a first search result from a search engine; clustering the first search result to get clustering information; calculating the correlations between the clustering information and the ranked list of the first search result, ...


8
Brent A Anderson, Thomas Ludwig, Edward J Nowak: Field effect transistor with raised source/drain fin straps. International Business Machines Corporation, Gibb & Rahman, Richard M Kotulak Esq, November 25, 2008: US07456471 (48 worldwide citation)

Therefore, disclosed above are embodiments of a multi-fin field effect transistor structure (e.g., a multi-fin dual-gate FET or tri-gate FET) that provides low resistance strapping of the source/drain regions of the fins, while also maintaining low capacitance to the gate by raising the level of the ...


9
David A Bartman: Dual output tray. Xerox Corporation, Gibb & Rahman, July 3, 2007: US07237969 (48 worldwide citation)

Embodiments herein comprise a printing/copying media output device or terminal that includes a single media output tray that can be used as a flat tray or a basket tray. The media output tray has a first portion that connects to a media output device, a second portion at the opposite (distal) end of ...


10
Edward J Nowak: Fin-type field effect transistor. International Business Machines Corporation, Gibb & Rahman, William D Sabo Esq, March 25, 2008: US07348642 (46 worldwide citation)

Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET asymmetrically to decrease fin resistance between the gate and the source regio ...



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