61
Fumiaki Funada, Tatsuo Morita, Hirohisa Tanaka, Hongyong Zhang, Toru Takayama: Method of manufacturing semiconductor device having different orientations of crystal channel growth. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, March 25, 1997: US05614426 (176 worldwide citation)

In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having ...


62
Naoto Kusumoto, Yasuhiko Takemura, Hisashi Ohtani: Thin film transistor having crystalline semiconductor layer obtained by irradiation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, August 12, 1997: US05656825 (176 worldwide citation)

An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.


63
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Transistor device employing crystallization catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, July 8, 1997: US05646424 (176 worldwide citation)

A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduc ...


64
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Transistor and process for fabricating the same. Semiconductor Energy Laboratory Co, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, January 21, 1997: US05595944 (175 worldwide citation)

A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallizati ...


65
Robert K Mitchiner: Cryosurgical apparatus and method. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, June 30, 1981: US04275734 (175 worldwide citation)

Cryosurgical apparatus for necrosing human tissue or the like, the apparatus comprising a coolant supply where coolant comprising nitrous oxide, carbon dioxide, Freon 13 or Freon 23 is disposed within a container as a liquid under its own vapor pressure; pressure elevating means for increasing the v ...


66
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, April 27, 1999: US05897347 (173 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


67
Hisashi Ohtani, Hiroki Adachi, Akiharu Miyanaga, Toru Takayama: Method for manufacturing a thin film transistor using catalyst elements to promote crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, August 5, 1997: US05654203 (173 worldwide citation)

In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is prec ...


68
Jun Koyama, Yuji Kawasaki: Semiconductor integrated circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, March 30, 1999: US05889291 (171 worldwide citation)

In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel ...


69
Shunpei Yamazaki: Gate insulated field effect transistors and method of manufacturing the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, March 25, 1997: US05614732 (169 worldwide citation)

A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is en ...


70
Hongyong Zhang, Hideto Ohnuma, Naoaki Yamaguchi, Yasuhiko Takemura: Method for fabricating thin film transistor using anodic oxidation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, April 16, 1996: US05508209 (169 worldwide citation)

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a rel ...



Click the thumbnails below to visualize the patent trend.