61
Toru Takayama, Yasuhiko Takemura: Semiconductor device having a thin film transistor and thin film diode. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, December 31, 1996: US05589694 (177 worldwide citation)

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou ...


62
Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi, Atsunori Suzuki: Method for manufacturing a semiconductor device using a catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, March 18, 1997: US05612250 (177 worldwide citation)

A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...


63
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Transistor and process for fabricating the same. Semiconductor Energy Laboratory Co, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, January 21, 1997: US05595944 (176 worldwide citation)

A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallizati ...


64
Fumiaki Funada, Tatsuo Morita, Hirohisa Tanaka, Hongyong Zhang, Toru Takayama: Method of manufacturing semiconductor device having different orientations of crystal channel growth. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, March 25, 1997: US05614426 (176 worldwide citation)

In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having ...


65
Naoto Kusumoto, Yasuhiko Takemura, Hisashi Ohtani: Thin film transistor having crystalline semiconductor layer obtained by irradiation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, August 12, 1997: US05656825 (176 worldwide citation)

An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.


66
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Transistor device employing crystallization catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, July 8, 1997: US05646424 (176 worldwide citation)

A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduc ...


67
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, April 27, 1999: US05897347 (173 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


68
Jun Koyama, Yuji Kawasaki: Semiconductor integrated circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, March 30, 1999: US05889291 (173 worldwide citation)

In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel ...


69
Hisashi Ohtani, Hiroki Adachi, Akiharu Miyanaga, Toru Takayama: Method for manufacturing a thin film transistor using catalyst elements to promote crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, August 5, 1997: US05654203 (173 worldwide citation)

In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is prec ...


70
Hongyong Zhang, Hideto Ohnuma, Naoaki Yamaguchi, Yasuhiko Takemura: Method for fabricating thin film transistor using anodic oxidation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, April 16, 1996: US05508209 (172 worldwide citation)

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a rel ...