51
Masamitsu Ishida, Hisatoyo Kato, Seiji Matsumoto: Method of and apparatus for processing a radiation image. Fuji Photo Film, Gerald J Ferguson Jr, Joseph J Baker, June 7, 1983: US04387428 (192 worldwide citation)

A method of and apparatus for processing a radiation image in a radiation image recording system in which a stimulable phosphor is stimulated with a scanning stimulating ray and the light emitted from the stimulable phosphor upon stimulation by the stimulating ray is detected by a detector which giv ...


52
Frank W Harris: Combined electrosurgery/cautery system and method. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, April 8, 1980: US04196734 (186 worldwide citation)

A combined electrosurgery/cautery system wherein a common heater/electrode element is employed to effect electrosurgical and cautery procedures.


53
David W Newton, Frederic M Hulett III, Christopher Ovens: Return electrode monitoring system for use during electrosurgical activation. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, November 22, 1983: US04416277 (185 worldwide citation)

A return electrode monitoring system for use with a patient return electrode adapted for contacting a patient, the return electrode having two, spaced apart conductors attached thereto for connecting the electrode to a generator of electrosurgical current which passes through the electrode, the syst ...


54
Yasuhiko Takemura: Method of making thin film transistor using lateral crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, June 10, 1997: US05637515 (184 worldwide citation)

A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the ...


55
Michio Shimizu, Takeshi Nishi, Toshimitsu Konuma: Method of making LCD in which resin columns are cured and the liquid crystal is reoriented. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 23, 1996: US05539545 (181 worldwide citation)

A liquid crystal display using a hydrophobic material as the material of resinous columns to orient the molecules of the liquid crystal parallel to the substrates. A hydrophilic material can also be used as the material of resinous columns to orient the molecules of the liquid crystal vertical to th ...


56
Hongyong Zhang, Hideki Uochi, Toru Takayama, Yasuhiko Takemura, Mutsuo Yamamoto: Method of forming a thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, January 21, 1997: US05595923 (180 worldwide citation)

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho ...


57
David W Newton: Apparatus for changing the output power level of an electrosurgical generator while remaining in the sterile field of a surgical procedure. Valleylab, Gerald J Ferguson Jr, May 9, 1989: US04827927 (179 worldwide citation)

An electrosurgical generating system and method including an electrosurgical generator; and a handpiece including an active electrode connected to the electrosurgical generator for applying electrosurgical current from the generator to a patient, the handpiece having switches disposed thereat for ch ...


58
David W Newton, Frank A Alford: Electrosurgical safety circuit and method of using same. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, June 13, 1978: US04094320 (179 worldwide citation)

An improved electrosurgical safety circuit where the currents in the active and patient leads are monitored, the monitored currents being respectively rectified and then subtracted from one another. Whenever the active current exceeds the patient or return current by an amount corresponding to a dyn ...


59
Robert K Mitchiner: Cryosurgical apparatus and method. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, June 30, 1981: US04275734 (177 worldwide citation)

Cryosurgical apparatus for necrosing human tissue or the like, the apparatus comprising a coolant supply where coolant comprising nitrous oxide, carbon dioxide, Freon 13 or Freon 23 is disposed within a container as a liquid under its own vapor pressure; pressure elevating means for increasing the v ...


60
Toru Takayama, Yasuhiko Takemura: Semiconductor device having a thin film transistor and thin film diode. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, December 31, 1996: US05589694 (177 worldwide citation)

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou ...



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