41
Akiharu Miyanaga, Hisashi Ohtani, Yasuhiko Takemura: Semiconductor device formed using a catalyst element capable of promoting crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, January 6, 1998: US05705829 (201 worldwide citation)

A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which t ...


42
Hisahi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, February 25, 1997: US05605846 (201 worldwide citation)

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable ...


43
Hongyong Zhang, Naoaki Yamaguchi, Yasuhiko Takemura: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, July 15, 1997: US05648277 (201 worldwide citation)

A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed ...


44
Shunpei Yamazaki: Gate insulated field effect transistors and method of manufacturing the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, May 7, 1996: US05514879 (201 worldwide citation)

A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is en ...


45
Shunpei Yamazaki: Method of making a thin film transistor with laser recrystallized source and drain. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Michael P Hoffman, Michael J Foycik Jr, February 23, 1988: US04727044 (200 worldwide citation)

A method of manufacturing an insulated gate field effect transistor by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate where the semiconductor film includes hydrogen or fluoride, forming a gate insulating film on part of the semiconductor f ...


46
Yasuhiko Takemura: Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow direction. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, April 1, 1997: US05616506 (200 worldwide citation)

A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly ...


47
Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi, Atsunori Suzuki: Method for manufacturing a semiconductor device using a catalyst. Semiconductor Energy Laboratory, Sharp Corporation, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, August 6, 1996: US05543352 (200 worldwide citation)

A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...


48
Hongyong Zhang, Hideki Uochi, Toru Takayama, Yasuhiko Takemura, Mutsuo Yamamoto: Semiconductor device employing crystallization catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, October 29, 1996: US05569936 (199 worldwide citation)

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho ...


49
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Semiconductor device having crystalline thin film transistors. Semiconductor Energy Laboratory Co, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, March 25, 1997: US05614733 (198 worldwide citation)

A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient conce ...


50
Akihiro Takehara, Hideto Fujii: Flooring material for building. Daiken Trade &, Gerald J Ferguson Jr, Tim L Brackett Jr, Sixbey Friedman Leedom & Ferguson P C, July 30, 1996: US05540025 (195 worldwide citation)

A flooring material for building comprises a wood overlaid board having a pair of side faces parallel to each other and a flexible sheet which is integrally layered on the back face of the wood overlaid board. The lower portion of the wood overlaid board is provided with a plurality of nick grooves ...