31
Shunpei Yamazaki: LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, December 23, 1997: US05701167 (219 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


32
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Semiconductor device having improved crystal orientation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, January 2, 1996: US05481121 (218 worldwide citation)

Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After th ...


33
Hisatoyo Kato, Masamitsu Ishida, Seiji Matsumoto: Gradation processing method and apparatus for radiation image recording system. Fuji Photo Film, Gerald J Ferguson Jr, Joseph J Baker, June 30, 1981: US04276473 (218 worldwide citation)

In a radiation image recording system in which a radiation image is once recorded in a stimulable phosphor and then read out and reproduced on a recording material, the gradation of the radiation image is processed to enhance the diagnostic efficiency and accuracy of the image. The radiation image i ...


34
Setsuo Nakajima, Shunpei Yamazaki, Naoto Kusumoto, Satoshi Teramoto: Method for producing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, January 27, 1998: US05712191 (217 worldwide citation)

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat tr ...


35
Hiroki Adachi, Yuugo Goto, Hongyong Zhang, Toru Takayama: Method of fabricating semiconductor device and method of processing substrate. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson, February 20, 1996: US05492843 (216 worldwide citation)

Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film ...


36
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, October 8, 1996: US05563426 (215 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


37
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga: Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, February 18, 1997: US05604360 (214 worldwide citation)

Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irr ...


38
Hognyong Zhang, Hideki Uochi, Toru Takayama, Yasuhiko Takemura: Method of fabricating a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson, June 20, 1995: US05426064 (213 worldwide citation)

Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and p ...


39
Yasuhiko Takemura: Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson, July 9, 1996: US05534716 (206 worldwide citation)

A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly ...


40
Satoshi Teramoto: Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, April 15, 1997: US05620910 (202 worldwide citation)

In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made t ...



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