21
Hongyong Zhang, Satoshi Teramoto: Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, January 30, 1996: US05488000 (247 worldwide citation)

Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si ...


22
Shunpei Yamazaki: Photoelectric conversion semiconductor and manufacturing method thereof. Gerald J Ferguson Jr, Joseph J Baker, October 11, 1983: US04409134 (247 worldwide citation)

A semi-amorphous, photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer, such as hydrogen, chlorine or fluorine, and the microcrystalline semicondu ...


23
Shunpei Yamazaki, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Kaoru Koyanagi, Shinji Imato, Toshiharu Yamaguchi, Mitsunori Sakama, Takashi Inujima: Liquid crystal filling device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Michael P Hoffman, Ronni S Malamud, September 8, 1987: US04691995 (242 worldwide citation)

An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between t ...


24
Charles F Morrison Jr: Electrosurgical method and apparatus for initiating an electrical discharge in an inert gas flow. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, August 9, 1977: US04040426 (240 worldwide citation)

A method and apparatus for initiating an electrical discharge in a formation of flowing inert gas disposed adjacent the end of an active electrode by generating charged particles in the vicinity of said inert gas formation. The charged particles are generated by an auxiliary electrical discharge pro ...


25
Abdo A Husseiny, Edwin D Stevens, Zeinab A Sabri: Detection of concealed explosives and contraband. Technology International Incorporated, Gerald J Ferguson Jr, Donald R Studebaker, Sixbey Friedman Leedom & Ferguson P C, February 4, 1997: US05600303 (238 worldwide citation)

The invention is a detector for detection of concealed explosives, drugs and contraband using x-rays imaging and powder pattern techniques and ultrasonics. In case of inspection of carry-on baggage a combination of computer-aided x-ray transmission imaging and x-ray diffraction analysis is used to s ...


26
Toru Takayama, Yasuhiko Takemura: Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson, March 26, 1996: US05501989 (237 worldwide citation)

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou ...


27
Hideomi Suzawa: Semiconductor device including active matrix circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, January 27, 1998: US05712495 (225 worldwide citation)

A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit o ...


28
Hiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura: Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Bradley D Blanche, Sixbey Friedman Leedom & Ferguson P C, September 2, 1997: US05663077 (225 worldwide citation)

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox ...


29
Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, December 15, 1998: US05849601 (224 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


30
Marvin Sendrow: System for authenticating users and devices in on-line transaction networks. C Lamont Whitham, Gerald J Ferguson Jr, Joseph J Baker, March 2, 1982: US04317957 (222 worldwide citation)

A method for efficiently protecting transactions and providing authentication of users and devices in on-line systems that transfer funds electronically, dispense cash, or provide a good or permit a service to be utilized is provided. The transaction may be initiated by a magnetic-striped plastic ca ...



Click the thumbnails below to visualize the patent trend.