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Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Bradley D Blanche, Sixbey Friedman Leedom & Ferguson, March 4, 1997: US05608232 (302 worldwide citation)

Method or fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


13
Frank W Harris, Frederick M Hulett: Electrosurgical generator. Valleylab, Gerald J Ferguson Jr, Michael P Hoffman, Ronni S Malamud, April 21, 1987: US04658819 (288 worldwide citation)

An electrosurgical generator having a source of electrosurgical energy connected to a patient and including control circuitry for decreasing the output power from the source with increasing patient impedance, the rate of power decrease being substantially greater than that which would result if the ...


14
Frank W Harris: Multiple source electrosurgical generator. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, February 19, 1980: US04188927 (286 worldwide citation)

A multiple source electrosurgical generator wherein one of the sources may be optimized for desiccation of the patient's tissue, another source may be optimized for fulguration thereof and a third source may be optimized for cutting. All sources operate into a common output circuit and may be actuat ...


15
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, June 17, 1997: US05639698 (282 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


16
Shunpei Yamazaki: Electro-optical device constructed with thin film transistors. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, September 26, 1995: US05453858 (277 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


17
Frank W Harris: Contact area measurement apparatus for use in electrosurgery. Valleylab, Gerald J Ferguson Jr, Joseph J Baker, April 29, 1980: US04200104 (266 worldwide citation)

Patient contact area measurement method and apparatus including a first electroconductive contact element adapted for contact with the patient; a second electroconductive contact element separated from the first contact element and also adapted for contact with the patient; and measuring circuitry d ...


18
Shunpei Yamazaki: Semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, December 9, 1997: US05696386 (254 worldwide citation)

A method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a coating consisting mainly of aluminum nitride, semiconductor devices such as TFTs or semiconductor integrated circuits comprising said semiconductor devices are built directly or indirec ...


19
Shunpei Yamazaki, Hongyong Zhang, Yasuhiko Takemura: Semiconductor device and method for forming the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, December 10, 1996: US05583369 (252 worldwide citation)

Thin-film semiconductor devices such as TFTs (thin-film transistors) and methods of fabricating the same. TFTs are formed on an insulating substrate. First, a substantially amorphous semiconductor coating is formed on the substrate. A protective coating transparent to laser radiation is formed on th ...


20
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, October 29, 1996: US05569610 (249 worldwide citation)

Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous ...



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