1
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg, Herman Gene Hockenhull, Felicia Diane Kaminsky: Silicon nitride from bis(tertiarybutylamino)silane. Air Products and Chemicals, Geoffrey L Chase, February 23, 1999: US05874368 (88 worldwide citation)

A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.


2
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg: Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane. Air Products and Chemicals, Geoffrey L Chase, November 2, 1999: US05976991 (46 worldwide citation)

A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from ...


3
Ravi Laxman
Ravi Kumar Laxman, Arthur Kenneth Hochberg: Low temperature deposition of silicon dioxide using organosilanes. Air Products and Chemicals, Geoffrey L Chase, April 28, 1998: US05744196 (25 worldwide citation)

The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of


4
Ravi Laxman
Ravi K Laxman, Arthur K Hochberg, David A Roberts, Raymond N Vrtis: Fluorine doped silicon oxide process. Air Products and Chemicals, Geoffrey L Chase, February 20, 1996: US05492736 (25 worldwide citation)

The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independ ...


5
David Bohling
Eric Anthony Robertson III, David Arthur Bohling, Mark Allen George, Scott Edward Beck: Gas phase removal of SiO.sub.2 /metals from silicon. Air Products and Chemicals, Geoffrey L Chase, December 12, 2000: US06159859 (4 worldwide citation)

The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature approp ...


6
Ravi Laxman
Ravi Kumar Laxman: Purification of organosilanes of group 13 (IIIA) and 15 (VA) impurities. Air Products and Chemicals, Geoffrey L Chase, May 11, 1999: US05902893 (2 worldwide citation)

A process for removal of Group 13 and/or 15 elements from an organosilane containing Group 13 and/or 15 elements as contaminants comprising contacting the organosilane with a reagent substantially soluble in the organosilane and capable of forming a complex with the Group 13 and/or Group 15 element ...


7
Wayne T McDermott, Richard C Ockovic, Jin J Wu, Douglas W Cooper, Alexander Schwarz, Henry L Wolfe: Surface cleaning using a cryogenic aerosol. Air Products and Chemicals, International Business Machines Corporation, Geoffrey L Chase, James C Simmons, William F Marsh, November 5, 1991: US05062898 (174 worldwide citation)

A method is disclosed for cleaning microelectronics surfaces using an aerosol of at least substantially solid argon particles which impinge upon the surface to be cleaned and then evaporate and the resulting gas is removed by venting along with the contaminants dislodged by the cleaning method.


8
Wayne T McDermott, Richard C Ockovic, Jin J Wu, Douglas W Cooper, Alexander Schwarz, Henry L Wolfe: Surface cleaning using an argon or nitrogen aerosol. Air Products and Chemicals, International Business Machines Corporation, Geoffrey L Chase, James C Simmons, William F Marsh, March 15, 1994: US05294261 (168 worldwide citation)

A method is disclosed for cleaning microelectronic surfaces using an aerosol of at least substantially solid argon or nitrogen particles which impinge upon the surface to be cleaned and then evaporate and the resulting gas is removed by venting along with the contaminants dislodged by the cleaning m ...


9
Wayne T McDermott, Jin J Wu, Richard C Ockovic: Apparatus to clean solid surfaces using a cryogenic aerosol. Air Products and Chemicals, International Business Machines Corporation, Geoffrey L Chase, James C Simmons, William F Marsh, May 11, 1993: US05209028 (166 worldwide citation)

The present invention is an apparatus for cleaning semi-conductor solid surfaces using a spray of frozen cryogen, such as argon, to impinge on the solid surface to remove contaminant particles. The apparatus includes an appropriate nozzle positioned in a housing designed for ultra clean conditions i ...


10
Manchao Xiao, Arthur Kenneth Hochberg, Kirk Scott Cuthill: Precursors for depositing silicon containing films and processes thereof. Air Products and Chemicals, Geoffrey L Chase, Joseph D Rossi, October 17, 2006: US07122222 (113 worldwide citation)

Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected fro ...



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