1
Eugene Fitzgerald
Zhiyuan Cheng, Eugene A Fitzgerald, Dimitri Antoniadis: FinFET structure and method to make the same. Massachusetts Institute of Technology, Gauthier & Connors, December 4, 2007: US07304336 (45 worldwide citation)

A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abut ...


2
Eugene Fitzgerald
Eugene A Fitzgerald, Arthuer J Pitera: Coplanar integration of lattice-mismatched semiconductor with silicon via wafer bonding virtual substrates. Massachusetts Institute of Technology, Gauthier & Connors, August 9, 2005: US06927147 (13 worldwide citation)

A method of bonding lattice-mismatched semiconductors is provided. The method includes forming a Ge-based virtual substrate and depositing on the virtual substrate a CMP layer that forms a planarized virtual substrate. Also, the method includes bonding a Si substrate to the planarized virtual substr ...


3
Eugene Fitzgerald
Zhiyuan Cheng, Eugene A Fitzgerald, Dimitri Antoniadis: Method of forming a digitalized semiconductor structure. Massachusetts Institute of Technology, Gauthier & Connors, June 24, 2008: US07390701 (9 worldwide citation)

A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abut ...


4
Eugene Fitzgerald
Lisa McGill, Eugene A Fitzgerald: Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate. Massachusetts Institute of Technology, Gauthier & Connors, January 17, 2006: US06987286 (7 worldwide citation)

A light-emitter structure is provided. The light emitter structure includes a platform. An Inx(AlyGa1-y)1-xP lower clad region is formed on the platform and has a lattice constant between approximately 5.49 Å and 5.62 Å. A strained quantum-well active region is formed on the lower clad region. An In ...


5
Eugene Fitzgerald
Andrew Y Kim, Eugene A Fitzgerald: Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates. Massachusetts Institute of Technology, Gauthier & Connors, October 19, 2004: US06805744 (4 worldwide citation)

A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor In


6
Eugene Fitzgerald
Minjoo L Lee, Eugene A Fitzgerald: Method for improving hole mobility enhancement in strained silicon p-type MOSFETS. Massachusetts Institute of Technology, Gauthier & Connors, February 28, 2006: US07005668

A method of forming a MOSFET device is provided. The method includes providing a substrate. The method includes forming on the substrate a relaxed SiGe layer having a Ge content between 0.51 and 0.80. Furthermore, the method includes depositing on the relaxed SiGe layer a ε-Si layer.


7
Eugene Fitzgerald
Zhiyuan Cheng, Eugene A Fitzgerald: Semiconductor-on-insulator article and method of making same. Gauthier & Connors, December 9, 2004: US20040245571-A1

A semiconductor structure includes a substrate. A first semiconductor layer is formed on the substrate and being converted into a porous layer. The porous layer is further oxidized to form a buried oxide layer.


8
Eugene Fitzgerald
Zhiyuan Cheng, Eugene A Fitzgerald, Dimitri Antoniadis: Integrated semiconductor device and method to make same. Attn Matthew E Connors, Gauthier & Connors, September 15, 2005: US20050202604-A1

A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abut ...


9
Eugene Fitzgerald
Gianni Taraschi, Eugene A Fitzgerald: Fabrication system and method for monocrystaline semiconductor on a substrate. Matthew E Connors, Gauthier & Connors, July 15, 2004: US20040137698-A1

A method is disclosed for creating a transferred composite in accordance with an embodiment of the invention. The method includes the steps of depositing a buffer structure that on a first substrate; depositing a bonding structure including at least one layer of a strained semiconductor material on ...


10
Eugene Fitzgerald
Yu Bai, Minjoo L Lee, Eugene A Fitzgerald: Tensile strained ge for electronic and optoelectronic applications. Gauthier & Connors, May 7, 2009: US20090114902-A1

A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatc ...