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Tamas S Szepesi: Regulated switched power circuit with resonant load. National Semiconductor Corporation, Gail W Woodward, Paul J Winters, Michael J Pollock, August 13, 1985: US04535399 (90 worldwide citation)

A switching circuit is employed to control the flow of energy from a power source to a tuned load. The control is achieved by means of a pulse width control voltage. The load current is sensed and fed to a phase locked loop which contains an oscillator producing an output that is slightly above load ...


12
Hem P Takiar, Thomas George: Bonding pad interconnection structure. National Semiconductor Corporation, Gail W Woodward, February 2, 1988: US04723197 (83 worldwide citation)

Semiconductor devices having bonding pads formed over active regions on the device are fabricated by providing protective layers between the bonding pad and the underlying active region(s). The first protective layer is formed from a polyimide material which can absorb shock resulting from tape auto ...


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Carmen D Burns: Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices. National Semiconductor Corporation, Gail W Woodward, February 12, 1980: US04188438 (80 worldwide citation)

Copper parts associated with thermal compression bonding of lead structures to a semiconductive device, such as the lead frame, the interconnect lead, and the gang bonding bumps, are coated with an antioxidant material. The antioxidant material and its thickness are chosen to be compatible with ther ...


14
David C Davies: Electronic calculating apparatus and wallet enclosure. National Semiconductor Corporation, Gail W Woodward, Willis E Higgins, February 21, 1978: US04075702 (77 worldwide citation)

Several embodiments of an electronic calculating apparatus and wallet enclosure are described. The apparatus is provided with a side-located battery compartment for providing, in combination with the enclosure, a very convenient and useful, relatively thin assembly. The enclosure comprises two flap ...


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Carmen D Burns: Manufacture of bumped composite tape for automatic gang bonding of semiconductor devices. National Semiconductor Corporation, Gail W Woodward, James A Sheridan, June 24, 1980: US04209355 (67 worldwide citation)

A composite tape product, employed in the gang bonding of semiconductor devices, is manufactured on an insulating strip that has a series of apertures therein. A plurality of metal fingers are bonded to the strip so that groups of fingers extend over the apertures. The finger ends terminate in a con ...


17
Thomas P Redfern, Thomas M Frederiksen, Joseph J Connolly Jr: Laser programmable read only memory. National Semiconductor Corporation, Gail W Woodward, James A Sheridan, December 9, 1980: US04238839 (66 worldwide citation)

A read only memory is fabricated using metal oxide semiconductor technology and is intended for incorporation into large scale integrated circuits. A plurality of memory transistors is arrayed in a configuration having columns, each of which is associated with an address line, and rows, each of whic ...


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Hem P Takiar, Kamal N Mehta: Molded semiconductor package having improved heat dissipation. National Semiconductor Corporation, Gail W Woodward, August 4, 1987: US04684975 (63 worldwide citation)

An improved metal tape for tape automated bonding provides for enhanced heat dissipation from the packaged semiconductor device. The invention includes two aspects. In the first aspect, individual metal tape leads are extended inward beyond the peripheral bonding pads of the semiconductor and over t ...


19
Saeed Nasiri: Fiber optic assembly for coupling an optical fiber and a light source. National Semiconductor Corporation, Michael J Pollock, Paul J Winters, Gail W Woodward, February 28, 1984: US04433898 (61 worldwide citation)

A heat molded optical fiber interconnect molds one end of a plastic optical fiber around light emitting surfaces of a light source such as a light emitting diode to provide a highly efficient optical and mechanical coupling between the optical fiber and the light source. In one preferred embodiment ...


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Robert C Byrne: Semiconductor die sealing. National Semiconductor Corporation, Gail W Woodward, Irving S Rappaport, James W Rose, August 4, 1992: US05136364 (61 worldwide citation)

Integrated circuit bonding pads are sealed by a surface passivation coating. The bonding pads are first edge-sealed by means of a first applied passivation coating that overlaps the edges of the bonding pad while leaving the central area uncoated. Then, a sequence of metal layers applied to overlap ...