1
Monroe L King: Method for conducting heat to or from an article being treated under vacuum. Eaton Corporation, R J McCloskey, F M Sajovec Jr, April 14, 1981: US04261762 (104 worldwide citation)

A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconducto ...


2
Robert B Bramhall Jr, Richard M Cloutier, Albert P Laber, Richard S Muka: Sealing apparatus for a vacuum processing system. Eaton Corporation, F M Sajovec, May 8, 1990: US04923584 (88 worldwide citation)

A sealing arrangement for a vacuum processing system for semiconductor wafers which is effective to apply a sealing force to a valve element (66) between chambers of the processing system. The valve element is defined by a platen which holds wafers (30) for transfer between a horizontal receiving po ...


3
Edward H Phillips: Docking apparatus. Eaton Corporation, D A Rowe, F M Sajovec, May 12, 1987: US04665360 (66 worldwide citation)

Docking apparatus for a semiconductor wafer prober (16). A cylindrical housing assembly provides an electrical interface between pads on the wafer (22) and contacts on the load board (76) of a test head (12) through a contact ring (74). The housing assembly is in two parts with a first part (29) cla ...


4
Marvin Farley: Ion implantation surface charge control method and apparatus. Eaton Corporation, F M Sajovec, February 14, 1989: US04804837 (63 worldwide citation)

An ion beam neutralizer. High energy electrons are directed through an ion beam neutralizing zone or region containing an ionizable gas. As the high energy electrons collide with the gas molecules, they ionize the gas molecules and produce low energy electrons which are trapped by a positively charg ...


5
Marvin Farley: Dose control method. Eaton Corporation, C H Grace, F M Sajovec, September 3, 1985: US04539217 (62 worldwide citation)

A method and apparatus for measuring and compensating for neutral ions in an ion beam in the dose control system of an ion implanter. The gas pressure in the implantation volume (15) is measured, and the pressure signal is converted to an effective beam current signal in accordance with a known rela ...


6
Julian G Blake, Richard S Muka, Peter R Younger: Sputtering system. Eaton Corporation, F M Sajovec, May 28, 1991: US05019233 (56 worldwide citation)

A system (10) for the vacuum processing of substrates such as semiconductor wafers which includes a central handling chamber (14), a number of separately pumped and randomly accessed process chambers (16-19), and dual load lock chambers (22) which communicate with the central handling chamber. This ...


7
Robert A Brune, Dorsey T Smith, Andrew M Ray: End station for a parallel beam ion implanter. Eaton Corporation, F M Sajovec, July 20, 1993: US05229615 (51 worldwide citation)

An end station for an ion implanter includes a loading station, a loadlock station, a vacuum chamber and a wafer handler within the vacuum chamber. The wafer handler includes a wafer-receiving platen assembly on the end of a multiple axis arm system wherein the arm system is capable of positioning t ...


8
John M Chrisos, Bertram F Fowler Jr, Richard S Muka: Wafer handling apparatus. Eaton Corporation, F M Sajovec, August 28, 1990: US04952299 (48 worldwide citation)

A device (24) for handling semiconduct wafers in a vacuum which includes a wafer-receiving arm (80) located in a vacuum chamber and an operating shaft (76) which extends from the vacuum chamber into an atmospheric chamber. The shaft is driven in an axial direction by means of a motor-driven ball scr ...


9
Paul O Stump, Calvin G Taylor: Wafer transport system. Eaton Corporation, C H Grace, F M Sajovec, August 13, 1985: US04534695 (37 worldwide citation)

A transport apparatus (10) for moving semiconductor wafers (12) between a cassette (15) and a process station (16), and from the process station to another cassette (17). A horizontally movable input shuttle (20) has three wafer holding elements (30, 32, 34) formed thereon. In a first position of th ...


10
Marvin Farley: Dose control apparatus. Eaton Corporation, C H Grace, F M Sajovec, May 6, 1986: US04587433 (36 worldwide citation)

An apparatus for measuring and compensating for neutral ions in an ion beam in the dose control system of an ion implanter. The gas pressure in the implantation volume (15) is measured, and the pressure signal is converted to an effective beam current signal in accordance with a known relationship a ...