1
Roy E Scheuerlein, Christopher J Petti: High density contact to relaxed geometry layers. Sandisk 3D, Dugan & Dugan PC, January 6, 2009: US07474000 (101 worldwide citation)

The present invention provides for a via and staggered routing level structure. Vertically overlapping vias connect to two or more routing levels formed at different heights. The routing levels are either both formed above or both formed below the vias, and all are formed above a semiconductor subst ...


2
Roy E Scheuerlein: Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse. SanDisk 3D, Dugan & Dugan PC, November 9, 2010: US07829875 (96 worldwide citation)

A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielect ...


3
Tanmay Kumar, S Brad Herner: Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride. SanDisk 3D, Dugan & Dugan PC, January 25, 2011: US07875871 (92 worldwide citation)

In the present invention a metal oxide or nitride compound which is a wide-band-gap semiconductor abuts a silicon, germanium, or alloy of silicon and/or germanium of the opposite conductivity type to form a p-n heterojunction. This p-n heterojunction can be used to advantage in various devices. In p ...


4
Yihwan Kim, Zhiyuan Ye, Ali Zojaji: Methods of forming carbon-containing silicon epitaxial layers. Applied Materials, Dugan & Dugan PC, October 4, 2011: US08029620 (81 worldwide citation)

In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at le ...


5
April Schricker, Brad Herner, Mark Clark: Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, November 2, 2010: US07824956 (75 worldwide citation)

In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) formi ...


6
S Brad Herner, Steven J Radigan: Nonvolatile memory cell comprising a reduced height vertical diode. Sandisk 3D, Dugan & Dugan PC, October 23, 2007: US07285464 (72 worldwide citation)

A nonvolatile memory cell according to the present invention comprises a bottom conductor, a semiconductor pillar, and a top conductor. The semiconductor pillar comprises a junction diode, including a bottom heavily doped region, a middle intrinsic or lightly doped region, and a top heavily doped re ...


7
S Brad Herner: Deposited semiconductor structure to minimize n-type dopant diffusion and method of making. SanDisk 3D, Dugan & Dugan PC, July 29, 2008: US07405465 (71 worldwide citation)

In deposited silicon, n-type dopants such as phosphorus and arsenic tend to seek the surface of the silicon, rising as the layer is deposited. When a second undoped or p-doped silicon layer is deposited on n-doped silicon with no n-type dopant provided, a first thickness of this second silicon layer ...


8
Tyler Thorp, Roy E Scheuerlein: Methods and apparatus for extending the effective thermal operating range of a memory. SanDisk 3D, Dugan & Dugan PC, February 2, 2010: US07656734 (70 worldwide citation)

Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response to a signal from the thermal senso ...


9
Tanmay Kumar, S Brad Herner: Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride. SanDisk 3D, Dugan & Dugan PC, July 24, 2012: US08227787 (69 worldwide citation)

In the present invention, a metal oxide or nitride compound which is a wide-band-gap semiconductor abuts a silicon, germanium, or alloy of silicon and/or germanium of the opposite conductivity type to form a p-n heterojunction. This p-n heterojunction can be used to advantage in various devices. In ...


10
Franz Kreupl, Jingyan Zhang, Huiwen Xu: Memory cell with silicon-containing carbon switching layer and methods for forming the same. SanDisk 3D, Dugan & Dugan PC, August 7, 2012: US08237146 (62 worldwide citation)

In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second c ...