1
Siu Lung Chan: Non-volatile memory with improved program-verify operations. Davis Wright Tremaine Sandisk Corporation, July 26, 2007: US20070171725-A1

In programming a non-volatile memory involving alternately applying a programming pulse and verifying the programming, time is saved in the program verify portion when, depending on the states of the memory cells, a portion of the verify operation is recognized to be superfluous and skipped. Prefera ...


2
Nima Mokhlesi, Jeffrey W Lutze: Memories with alternate sensing techniques. Davis Wright Tremaine Sandisk Corporation, July 26, 2007: US20070171744-A1

The present invention presents a scheme for sensing memory cells. Selected memory cells are discharged through their channels to ground and then have a voltage level placed on the traditional source and another voltage level placed on the control gate, and allowing the cell bit line to charge up. Th ...


3
Shou Chang Tsao, Yan Li: Non-volatile memory with power-saving multi-pass sensing. Davis Wright Tremaine Sandisk Corporation, July 26, 2007: US20070171746-A1

A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has features to reduce power consumption during sensing, which is included in read, and program/verify operations. A sensing verify operation includes one or more ...


4
Carlos J Gonzalez, Kevin M Conley: Flash Memory Data Correction and Scrub Techniques. Davis Wright Tremaine Sandisk Corporation, September 13, 2007: US20070211532-A1

In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The someti ...


5
Sergey Anatolievich Gorobets, Kevin M Conley: Methods of End of Life Calculation for Non-Volatile Memories. Davis Wright Tremaine Sandisk Corporation, November 15, 2007: US20070266200-A1

A system and methods are given for providing information on the amount of life remaining for a memory having a limited lifespan, such as a flash memory card. For example, it can provide a user with the amount of the memory's expected remaining lifetime in real time units (i.e., hours or days) or as ...


6
Sergey Anatolievich Gorobets, Kevin M Conley: Non-Volatile Memory System with End of Life Calculation. Davis Wright Tremaine Sandisk Corporation, November 15, 2007: US20070263444-A1

A system and methods are given for providing information on the amount of life remaining for a memory having a limited lifespan, such as a flash memory card. For example, it can provide a user with the amount of the memory's expected remaining lifetime in real time units (i.e., hours or days) or as ...


7
Raul Adrian Cernea, Yan Li, Shahzad Khalid, Siu Lung Chan: Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits. Davis Wright Tremaine Sandisk Corporation, November 15, 2007: US20070263450-A1

A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar ...


8
Carl W Werner, Andreas M Haeberli, Leon Sea Jiunn Wong, Cheng Yuan Michael Wang, Hock C So, Sau C Wong: Integrated Circuit with Analog or Multilevel Storage Cells and User-Selectable Sampling Frequency. Davis Wright Tremaine Sandisk Corporation, February 28, 2008: US20080049498-A1

Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may ...


9
Yan Li, Yupin Kawing Fong, Toru Miwa: Non-Volatile Memory And Control With Improved Partial Page Program Capability. Davis Wright Tremaine Sandisk Corporation, January 31, 2008: US20080025099-A1

In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold ...


10
Warren Middlekauff, Robert C Miller: Memory Card With Latching Mechanism for Hinged Cover. Davis Wright Tremaine Sandisk Corporation, February 7, 2008: US20080030963-A1

An enclosed re-programmable non-volatile memory card includes a cover that is hinged to the card to normally cover a set of external contacts to which the memory is connected but which can be rotated out of the way by hand to expose that set of contacts for connection with a mating receptacle of a h ...