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John W Sliwa Jr: Method for coplanar integration of semiconductor ic devices. Advanced Micro Devices, David W Collins, February 5, 1991: US04990462 (245 worldwide citation)

A high degree of wafer-scale integration of normally incompatible IC devices is achieved by providing a plurality of segments (10), each segment having thereon one or more circuits, circuit elements, sensors and/or I/O connections (14'). Each segment is provided with at least one edge (12) having an ...


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Richard C Henderson: Method of controlling MOSFET threshold voltage with self-aligned channel stop. Hughes Aircraft Company, David W Collins, W H MacAllister, February 16, 1982: US04315781 (149 worldwide citation)

A process is provided for fabricating MOSFET devices having field source, gate and drain regions. The threshold voltage of both the channel and field regions of such devices is controlled by forming a comparatively thick oxide film on a semiconductor surface, defining enhancement mode transistor reg ...


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Gordhanbhai N Patel, Anthony F Preziosi, Ray H Baughman: Time-temperature history indicators. Allied Chemical Corporation, David W Collins, Ernest A Polin, December 28, 1976: US03999946 (146 worldwide citation)

Compositions containing at least two conjugated acetylene groups (-C.tbd.C-C.tbd.C-) are suitable as integral time-temperature history indicators. These compositions exhibit sequences of irreversible color changes at combinations of times and temperatures specific to each composition. Thus, when sup ...


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Ranjan Ray: Amorphous alloys which include iron group elements and boron. Allied Chemical Corporation, David W Collins, January 10, 1978: US04067732 (100 worldwide citation)

Iron group-boron base amorphous alloys have improved ultimate tensile strength and hardness and do not embrittle when heat treated at temperatures employed in subsequent processing steps, as compared with prior art amorphous alloys. The alloys have the formula


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Pankaj Dixit, Jack Sliwa, Richard K Klein, Craig S Sander, Mohammad Farnaam: Contact plug and interconnect employing a barrier lining and a backfilled conductor material. Advanced Micro Devices, David W Collins, October 2, 1990: US04960732 (98 worldwide citation)

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion an ...


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Angelo Yializis: Method of forming a hybrid polymer film. Sigma Laboratories of Arizona, David W Collins, April 10, 2001: US06214422 (95 worldwide citation)

A hybrid film, comprising a first polymer film having a plasma-treated surface and a second polymer film having first and second surfaces, with the first surface of the second polymer film being disposed along the first plasma-treated surface of the first polymer film, has superior thermal and mecha ...


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Angelo Yializis: Hybrid polymer film. Sigma Laboratories of Arizona, David W Collins, Antonio R Durando, July 4, 2000: US06083628 (87 worldwide citation)

A hybrid film, comprising a first polymer film having a plasma-treated surface and a second polymer film having first and second surfaces, with the first surface of the second polymer film being disposed along the first plasma-treated surface of the first polymer film, has superior thermal and mecha ...


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Bulent M Basol, Vijay K Kapur: Method and making group IIB metal - telluride films and solar cells. International Solar Electric Technology, David W Collins, August 21, 1990: US04950615 (85 worldwide citation)

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form t ...


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Ugur Ortabasi: Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies. United Innovations, David W Collins, February 10, 2004: US06689949 (77 worldwide citation)

A concentrating photovoltaic module is provided which provides a concentration in the range of about 500 to over 1,000 suns and a power range of a few kW to 50 kW. A plurality of such modules may be combined to form a power plant capable of generating over several hundred megaWatts. The concentratin ...