11
Samuel A Sangokoya: Preparation of methylaluminoxanes. Ethyl Corporation, David M Bunnell, September 28, 1993: US05248801 (56 worldwide citation)

Soluble methylaluminoxane is prepared by reacting water with a solution of an alkylaluminum compound, wherein at least about half the alkyl groups are methyl groups, in a 1:4 to 4:1 by volume aliphatic hydrocarbon/aromatic hydrocarbon solvent mixture, wherein the aliphatic hydrocarbon solvent has a ...


12
Karl Karlson: Object positioning process and apparatus. International Business Machines Corporation, David M Bunnell, October 4, 1977: US04052603 (54 worldwide citation)

Objects, such as a pattern mask and a photoresist coated substrate, are placed in translational and/or rotational alignment by a system in which a target on one object is successively aligned to two targets on the other object so that the accuracy of each alignment can be verified. The system compar ...


13
Harold D Edmonds, Gary Markovits: High performance silicon wafer and fabrication process. International Business Machines Corporation, David M Bunnell, March 13, 1979: US04144099 (53 worldwide citation)

Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800.degree.-1150.degree. C. for about 1 to 3 hours and quickly cooling the ...


14
Jean Marie Lemonie, Jean Luc Mathis: Fabrication techniques for multilayer ceramic modules. International Business Machines Corporation, David M Bunnell, May 24, 1977: US04024629 (53 worldwide citation)

Metallized through-holes are provided in insulating substrates by placing the substrate onto an absorbant carrier and screening a metallization paste, which contains a metal component dispersed in an organic solvent, into the holes. The carrier absorbs the solvent and a portion of the paste adheres ...


15
Raymond B Dawson, Joel F Carpenter: Invert drilling fluid. Albemarle Corporation, David M Bunnell, July 11, 1995: US05432152 (45 worldwide citation)

An environmentally friendly invert drilling fluid comprises a water-in-oil emulsion which includes (a) at least 50 volume percent of a low toxicity base oil, and (b) at least one additive selected from the group consisting of emulsifiers, viscosifiers, weighting agents, oil wetting agents and fluid ...


16
Samuel A Sangokoya: Siloxy-aluminoxane compositions, and catalysts which include such compositions with a metallocene. Albemarle Corporation, David M Bunnell, February 21, 1995: US05391529 (42 worldwide citation)

A siloxy-aluminoxane composition which is the reaction product of an alkyldisiloxane and an aluminoxane is provided. The compositions in combination with metallocenes of transition metals form catalysts which can be used in the polymerization of olefins such as ethylene.


17
Vincent Shea, Walter J Wojcik: Pellicle cover for projection printing system. International Business Machines Corporation, David M Bunnell, December 26, 1978: US04131363 (41 worldwide citation)

In a projection printing system the pattern mask, whose image is projected onto a light sensitive layer, is protected with a thin, 0.2-6 micron thick, transparent film or pellicle which is positioned an optically large distance of about 1-125 mm from the mask surface by a spacer member. Any dirt par ...


18
Raymond W Angelo, Richard M Poliak, John R Susko: Polyimide coating process and material. International Business Machines Corporation, David M Bunnell, December 9, 1980: US04238528 (40 worldwide citation)

A protective layer composition, suitable for protecting metal electrodes on components and other microelectronic circuitry, comprises an organic thermoplastic polymeric material, an organic solvent or solvents, and a non-ionic fluorocarbon surfactant as a wetting/leveling/flow control agent. A typic ...


19
James Robert Kitcher: Electron beam lithography process. International Business Machines Corporation, David M Bunnell, July 4, 1978: US04099062 (36 worldwide citation)

In an electron beam lithography process, shapes are formed which differ from the beam spot size and the grid by employing multiple overlapping exposures having a reduced exposure level.


20
Victor G Cazcarra: Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step. International Business Machines Corporation, David M Bunnell, September 2, 1980: US04220483 (34 worldwide citation)

The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750.degree.-900.degree. C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.