1
Hormazdyar M Dalal, Majid Ghafghaichi, Lucian A Kasprzak, Hans Wimpfheimer: Method for fabricating tantalum semiconductor contacts. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, July 29, 1980: US04215156 (107 worldwide citation)

A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pre ...


2
Feng Jung Wu: Preparation of high purity vinylindene olefin. Ethyl Corporation, David M Bunnell, February 11, 1992: US05087788 (91 worldwide citation)

A process for dimerizing an alpha-olefin of the general formula RCH.dbd.CH.sub.2, where R is alkyl, cycloalkyl, or cycloalkenyl with a carbon number ranging from 1 to about 30, to a vinylidene olefin comprises contacting said alpha-olefin at temperatures between about -60.degree. C. to and 280.degre ...


3
Andrew G Papay, Rolfe J Hartley: Oil-soluble phosphorus antiwear additives for lubricants. Ethylk Petroleum Additives, David M Bunnell, John F Sieberth, August 15, 1989: US04857214 (78 worldwide citation)

Oil-soluble reaction products of inorganic phosphorus containing acids or anhydrides with a boron compound and ashless dispersants such as alkenyl succinimides are useful as antiwear/EP additives in lubricants.


4
Kenneth Chang, David C Cosman, Helmut M Gartner, Anthony J Hoeg Jr: Method of forming thin film interconnection systems. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, January 22, 1980: US04184909 (78 worldwide citation)

A method for forming thin film interconnection patterns atop substrates, particularly semiconductor substrates. It features the use of the passivation layer itself, typically glass, as a stable masking material to etch the conductive lines. Conversely, the metal conductor is used as a stable mask in ...


5
Samuel A Sangokoya: Method of removing gel forming materials from methylaluminoxanes. Ethyl Corporation, David M Bunnell, August 10, 1993: US05235081 (69 worldwide citation)

Gel and gel forming materials are removed from methylaluminoxane by mixing an aromatic hydrocarbon solvent solution of the methylaluminoxane with an aliphatic hydrocarbon solvent and then separating the precipitated solids from the methylaluminoxane solution.


6
Holger Moritz, Gabor Paal: Method of making a negative photoresist image. International Business Machines Corporation, David M Bunnell, August 1, 1978: US04104070 (68 worldwide citation)

The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic r ...


7
Samuel A Sangokoya: Heterogeneous methylaluminoxane catalyst system. Ethyl Corporation, David M Bunnell, May 3, 1994: US05308815 (64 worldwide citation)

A heterogeneous catalyst composition comprising a primary catalyst such as a metallocene and a methylaluminoxane, at least about 10 percent but less than about 40 percent of the total aluminum value in the methylaluminoxane being soluble in toluene at 25.degree. C.


8
Samuel A Sangokoya: Method of making gel free alkylaluminoxane solutions. Ethyl Corporation, David M Bunnell, October 20, 1992: US05157137 (60 worldwide citation)

Clear, gel free solutions of alkylaluminoxane, such as methylaluminoxane, in an organic solvent, such as toluene, are provided by treating a solution of the alkylaluminoxane with an anhydrous salt and/or hydroxide of an alkali or alkaline earth metal and then removing the solids from the solution su ...


9
Gerald Z Smith Jr: Falling film aluminoxane process. Ethyl Corporation, David M Bunnell, April 7, 1992: US05103031 (58 worldwide citation)

Alkylaluminoxanes are made by conducting a solution of an alkylaluminum (e.g. trimethyl aluminum) in an inert solvent to the top of an upright hollow column and allowing the solution to flow as a thin film down the inner surface of the column while passing a wet inert gas (e.g. nitrogen) through the ...


10
Samuel A Sangokoya: Preparation of aluminoxanes. Ethyl Corporation, David M Bunnell, August 20, 1991: US05041583 (58 worldwide citation)

Hydrocarbylaluminoxanes such as methylaluminoxanes are prepared by reacting a hydrocarbylaluminum compound with a hydrate of an alkali or alkaline earth metal hydroxide.