1
Yoshi Ono, Wei Wei Zhuang, Rajendra Solanki: Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, July 16, 2002: US06420279 (253 worldwide citation)

Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precur ...


2
Yanjun Ma, Yoshi Ono: Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, October 2, 2001: US06297539 (244 worldwide citation)

A high-k dielectric films is provided, which is doped with divalent or trivalent metals to vary the electron affinity, and consequently the electron and hole barrier height. The high-k dielectric film is a metal oxide of either zirconium (Zr) or hafnium (Hf), doped with a divalent metal, such as cal ...


3
Yanjun Ma, Yoshi Ono: Multilayer dielectric stack and method. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, June 18, 2002: US06407435 (224 worldwide citation)

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relativ ...


4
Sheng Teng Hsu: CMOS self-aligned strapped interconnection. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, May 14, 2002: US06388296 (182 worldwide citation)

An CMOS interconnection method that permits small source/drain surface areas has been provided. The interconnection is applicable to both strap and via type connections. The surface areas of the small source/drain regions are extended into neighboring field oxide regions by forming a silicide film f ...


5
Tue Nguyen, Sheng Teng Hsu: Low resistance contact between integrated circuit metal levels and method for same. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, Gerald W Maliszewski, David C Ripma, May 18, 1999: US05904565 (161 worldwide citation)

A method of forming a direct, copper-to-copper, connection between levels in an IC is disclosed. A via interconnection is formed by isotropically depositing a barrier material in a via through an insulator to a lower copper level, and then anisotropically etching the via to remove the barrier materi ...


6
Yanjun Ma, Yoshi Ono: Method of forming a multilayer dielectric stack. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, September 30, 2003: US06627503 (161 worldwide citation)

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relativ ...


7
Yanjun Ma, Yoshi Ono: Aluminum-doped zirconium dielectric film transistor structure and deposition method for same. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, May 9, 2000: US06060755 (131 worldwide citation)

A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent ...


8
John F Conley Jr, Yoshi Ono, Rajendra Solanki: Method for depositing a nanolaminate film by atomic layer deposition. Sharp Laboratories of America, David C Ripma, Joseph P Curtin, August 16, 2005: US06930059 (129 worldwide citation)

An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well su ...


9
Sheng Teng Hsu, Wei Pan, Fengyan Zhang, Wei Wei Zhuang, Tingkai Li: RRAM memory cell electrodes. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Joseph P Curtin, February 1, 2005: US06849891 (119 worldwide citation)

A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation resistive layer. A method of fabri ...


10
Sachin G Deshpande: System and method for simultaneous media playout. Sharp Laboratories of America, David C Ripma, Joseph P Curtin, David A Cordeiro, May 16, 2006: US07047308 (104 worldwide citation)

A system and method have been provided for achieving simultaneous media playout in a network including a server and a plurality of clients. The method comprises: from a server, supplying a media stream to clients at a first bitrate (R1); determining the network delivery requirement; and, in response ...