1
Katherina Babich
Katherina E Babich, Alessandro Cesare Callegari, Julien Fontaine, Alfred Grill, Christopher V Jahnes, Vishnubhai Vitthalbhai Patel: Tunable and removable plasma deposited antireflective coatings. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, August 6, 2002: US06428894 (63 worldwide citation)

Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1. ...


2
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. International Business Machines Corporation, Daniel P Morris, February 4, 2003: US06514667 (53 worldwide citation)

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, David R Medeiros, Wayne M Moreau: Multifunctional polymeric materials and use thereof. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, February 3, 2004: US06686124 (24 worldwide citation)

A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizin ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Berk, Daniel P Morris, April 22, 2008: US07361444 (9 worldwide citation)

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist st ...


5
Katherina Babich
Marie Angelopoulos, Edward D Babich, Inna V Babich, Katherina E Babich, James J Bucchignano, Karen E Petrillo, Steven A Rishton: Forming a pattern of a negative photoresist. International Business Machines Corporation, Daniel P Morris, Pollock Vande Sande & Amernick, June 26, 2001: US06251569 (9 worldwide citation)

A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.


6
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris, April 18, 2006: US07030008 (8 worldwide citation)

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


7
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, May 29, 2007: US07223517 (7 worldwide citation)

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


8
Katherina Babich
Katherina E Babich, Sean D Burns, Elbert E Huang, Arpan P Mahorowala, Dirk Pfeiffer, Karen Temple: Antireflective composition and process of making a lithographic structure. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 5, 2008: US07326442 (6 worldwide citation)

An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Grou ...


9
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris, November 25, 2003: US06653027 (5 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


10
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, May 4, 2010: US07709177 (5 worldwide citation)

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...