1
Donald L Barton: Planarization of dielectric films on integrated circuits. Hewlett Packard Company, Jeffery B Fromm, Cheryl L Shavers, October 8, 1985: US04545852 (65 worldwide citation)

A method for planarizing dielectric films between conductive layers on semiconductor wafers is disclosed. Two successive dielectric layers are deposited over a pattern on a wafer and coated with a polymer which has a substantially flat surface. Planarization is obtained when the wafer is plasma etch ...


2
Theodore I Kamins, Donald R Bradbury, Clifford I Drowley: Trench isolated transistors in semiconductor films. Hewlett Packard Co, Cheryl L Shavers, Jeffery B Fromm, March 26, 1985: US04507158 (52 worldwide citation)

A method for trench isolation of a silicon island for device fabrication using only conventional very large scale integration (VLSI) techniques is provided. The combination of the sidewall isolation achieved with the trench isolation and the underlying oxide film create a totally dielectrically isol ...


3
Donald R Bradbury, Chi Wing Tsao, Theodore I Kamins: CVD lateral epitaxial growth of silicon over insulators. Hewlett Packard Company, Jeffery B Fromm, Cheryl L Shavers, June 11, 1985: US04522662 (46 worldwide citation)

A method for growing Silicon On Insulator (SOI) films using only conventional very large scale integration (VLSI) techniques is provided. By sequentially varying the flow of HCL gas during the vertical-growth, lateral-overgrowth, coalescence, and planarization stages of the epitaxial deposition proc ...


4
Clifford I Drowley: Grain boundary confinement in silicon-on-insulator films. Hewlett Packard Company, Douglas L Weller, Cheryl L Shavers, October 8, 1985: US04545823 (46 worldwide citation)

Regular arrays of grain boundary free silicon islands have been produced in a silicon on insulator (SOI) structure by using a pattern antirelfective coating in combination with a laser scanning technique. The antireflective coating pattern is made up of a series of parallel stripes terminating in se ...


5
Peter U Guckenheimer: Keyboard switch assembly having sensory feedback. Hewlett Packard Company, Jeffery B Fromm, Cheryl L Shavers, February 19, 1985: US04500758 (18 worldwide citation)

A keyboard switch assembly is disclosed which utilizes a new switch design for providing tactile feedback to the user while nevertheless permitting long switch life. The keyboard switch assembly provides adjustable touch control to the user via a mechanical adjustment means while requiring minimal k ...


6
Richard D Jolly: Method for making a self-aligned vertically stacked gate MOS device. Hewlett Packard Company, Jeffery B Fromm, Cheryl L Shavers, December 18, 1984: US04488348 (14 worldwide citation)

A method and structure for producing a vertically built MOS structure which permits the out diffusion of dopant from a layer of chemically deposited (CVD) doped oxide into a layer of CVD laser recrystallized polysilicon is disclosed. This out diffusion is accomplished during a high temperature oxida ...


7
Tun S Tan: Pre-passivated sub-micrometer gate electrodes for MESFET devices. Hewlett Packard Company, Cheryl L Shavers, Karl E Bring, Patrick J Barrett, October 21, 1986: US04618510 (12 worldwide citation)

A method of fabricating sub-micrometer gates in a semiconductor device is disclosed in which a pre-passivation layer is formed over the gate region during fabrication. This pre-passivation layer protects the gate and underlying gate trough region from surface contamination during device fabrication. ...


8

9