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Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor using a hardmask. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara, CANALE Anthony J, December 22, 2005: WO/2005/122245

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


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HERRIN Russell T, JAHNES Christopher V, STAMPER Anthony K, WHITE Eric J: Microsystème électromécanique à cavité plane et structures correspondantes, procédés de fabrication correspondants et structures de conception correspondantes, Planar cavity mems and related structures, methods of manufacture and design structures. International Business Machine Corporation, HERRIN Russell T, JAHNES Christopher V, STAMPER Anthony K, WHITE Eric J, CANALE Anthony J, December 29, 2011: WO/2011/162950 (18 worldwide citation)

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method fur ...


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DUNBAR George A, HE Zhong Xiang, MALING Jeffrey C, MURPHY William J, STAMPER Anthony K: Microsystème électromécanique (mems) à cavité plane et structures associées, procédés de fabrication et de conception de structures, Planar cavity mems and related structures, methods of manufacture and design structures. International Business Machines Corporation, DUNBAR George A, HE Zhong Xiang, MALING Jeffrey C, MURPHY William J, STAMPER Anthony K, CANALE Anthony J, December 29, 2011: WO/2011/162953 (18 worldwide citation)

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plural ...


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Adkisson James W, Gambino Jeffrey P, Jaffe Mark D, Leidy Robert K, Stamper Anthony K: A damascene copper wiring image sensor. International Business Machines Corporation, Adkisson James W, Gambino Jeffrey P, Jaffe Mark D, Leidy Robert K, Stamper Anthony K, CANALE Anthony J, June 8, 2006: WO/2006/060212 (2 worldwide citation)

A CMOS image sensor array (100) and method of fabrication wherein the sensor includes Copper (Cu) metallization levels (M1, M2) allowing for incorporation of a thinner interlevel dielectric stack (13 Oa-c) with improved thickness uniformity to result in a pixel array exhibiting increased light sensi ...


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Adkisson James W, Gambino Jeffrey P, Jaffe Mark D, Leidy Robert K, Rassel Richard J, Stamper Anthony K: Cmos imager of eliminating high reflectivity interfaces. International Business Machines Corporation, Adkisson James W, Gambino Jeffrey P, Jaffe Mark D, Leidy Robert K, Rassel Richard J, Stamper Anthony K, CANALE Anthony J, July 6, 2006: WO/2006/071540 (1 worldwide citation)

An image sensor (20) and method of fabrication wherein the sensor includes Copper (Cu) metallization levels (135a, 135b) allowing for incorporation of a thinner interlevel dielectric stack (130a-130c) to result in a pixel array (100) exhibiting increased light sensitivity. The image sensor includes ...


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He Zhong Xiang, Rassel Robert M, Voldman Steven H: An integrated circuit structure incorporating an inductor, an associated design method and an associated design system. International Business Machines Corporation, He Zhong Xiang, Rassel Robert M, Voldman Steven H, CANALE Anthony J, October 9, 2008: WO/2008/121619 (1 worldwide citation)

Disclosed are embodiments of a circuit (e.g., an electrostatic discharge (ESD) circuit), a design methodology and a design system. In the circuit, an ESD device is wired to a first metal level (e.g., Ml). An inductor is formed in a second metal level (e.g., M5) above the first metal level and is ali ...


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JAHNES Christopher V, STAMPER Anthony K: SYSTÈME MICROÉLECTROMÉCANIQUE (MEMS) ET PLOTS DACTIONNEUR, PROCÉDÉ DE FABRICATION ET STRUCTURES DE CONCEPTION CORRESPONDANTS, MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHOD OF MANUFACTURE AND DESIGN STRUCTURES. INTERNATIONAL BUSINESS MACHINES CORPORATION, JAHNES Christopher V, STAMPER Anthony K, CANALE Anthony J, December 27, 2012: WO/2012/177304 (1 worldwide citation)

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fix ...


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Geffken Robert M, Motsiff William T: Adjustable self-aligned air gap dielectric for low capacitance wiring. International Business Machines Corporation, Geffken Robert M, Motsiff William T, CANALE Anthony J, April 14, 2005: WO/2005/034200 (1 worldwide citation)

An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between ...


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HIBBELER JASON D: Image sensor pixel structure employing a shared floating diffusion. INTERNATIONAL BUSINESS MACHINES CORPORATION, Canale Anthony J, February 10, 2011: WO/2011/016897 (1 worldwide citation)

A pixel structure for an image sensor includes a semiconductor material portion (30) having a coplanar and contiguous semiconductor surface and including four photodiodes (30A, 30B, 30C, 30D), four channel regions (31A, 31B, 31C, 31D), and a common floating diffusion region (32). Each of the four ch ...


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Gambino Jeffrey P, He Zhong Xiang, Ogg Kevin N, Rassel Richard J, Rassel Robert M: Interlevel conductive light shield. International Business Machines Corporation, Gambino Jeffrey P, He Zhong Xiang, Ogg Kevin N, Rassel Richard J, Rassel Robert M, Canale Anthony J, December 10, 2009: WO/2009/149221 (1 worldwide citation)

A conductive light shield is formed over a first dielectric layer of a via level in a metal interconnect structure The conductive light shiel covers a floating drain of an image sensor pixel cell A second dielectric layer is formed over the conductive light shield and at least on via extending from ...



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