1
Larry J Hornbeck, William E Nelson: Spatial light modulator and method. Texas Instruments Incorporated, James C Kesterson, B Peter Barndt, Richard L Donaldson, March 17, 1992: US05096279 (511 worldwide citation)

A method of resetting deflectable pixels of a spatial light modulator is disclosed. A pulse train of voltage is applied to the device to cause it to mobe from its deflected position.


2
Andrew P Lane, Douglas A Webb, Gene R Frederick: Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride. Texas Instruments, B Peter Barndt, James T Comfort, Melvin Sharp, January 16, 1990: US04894352 (210 worldwide citation)

In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capabil ...


3
Richard A Elder, Randy Johnson, Dean L Frew, Arthur M Wilson: Non-destructive burn-in test socket for integrated circuit die. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, June 23, 1992: US05123850 (193 worldwide citation)

Disclosed is a burn-in test socket which serves as a temporary package for integrated circuit die, multichip hybrid or a complete wafer without damaging the bonding pads or insulating passivation on the die during test and burn-in.


4
Lesli A Derryberry: Thermally efficient power device package. Texas Instruments Incorporated, B Peter Barndt, James T Comfort, Melvin Sharp, March 6, 1990: US04907067 (172 worldwide citation)

A hermetic semiconductor device package is disclosed which is capable of handling high power devices in an electrically and thermally efficient manner. The package includes a dielectric substrate with cutouts for die mount and/or bonding to a plurality of thermally and electrically conductive plates ...


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Satwinder Malhi, Oh Kyong Kwon: Method of forming an apparatus for burn in testing of integrated circuit chip. Texas Instruments Incorporated, James C Kesterson, B Peter Barndt, Richard L Donaldson, February 18, 1992: US05088190 (135 worldwide citation)

An integrated circuit AC test and burn-in socket (10) for communicating test signals between test circuitry and an integrated circuit chip (11) comprises connection circuitry (32) associated to engage the chip (11) and communicate test signals between the chip (11) and the test circuitry. A complian ...


7
Mehrdad M Moslehi, Steve S Huang: Distributed ECR remote plasma processing and apparatus. Texas Instruments Incorporated, B Peter Barndt, James T Comfort, Melvin Sharp, February 26, 1991: US04996077 (134 worldwide citation)

A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the ...


8
Allan T Mitchell: Floating-gate memory cell with tailored doping profile. Texas Instruments Incorporated, James C Kesterson, B Peter Barndt, Richard L Donaldson, October 20, 1992: US05156990 (117 worldwide citation)

A floating-gate memory cell with an improved doping profile. After the substrate background doping has been set to a desired level (e.g. by a high dose implant and long drive in), two implant of opposite type are used to shape the doping profile of the floating-gate transistor. A boron implant is us ...


9
Roy Alan Hastings: Power factor correction control for switch-mode power converters. Texas Instruments Incorporated, B Peter Barndt, Richard Donaldson, William E Hiller, July 28, 1992: US05134355 (117 worldwide citation)

A PFC controller (FIG. 5) provides power factor correction and peak current limiting for a switch-mode power converter of any topology (buck, boost or buck-boost), without having to directly sense inductor current. The PFC control technique involves using a piecewise-polynomial analog computer (AC) ...


10
Shivaling S Mahant Shetti, Thomas J Aton, Rebecca J Gale: Scanning electron microscope based parametric testing method and apparatus. Texas Instruments Incorporated, Ira S Matsil, B Peter Barndt, Richard L Donaldson, November 3, 1992: US05159752 (116 worldwide citation)

A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). ...