1
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Atmi, February 26, 2004: US20040039219-A1 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


2
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low-K dielectric thin films and chemical vapor deposition method of making same. Margaret Chappuis, ATMI, April 3, 2003: US20030064154-A1 (2 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


3
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low dielectric constant thin films and chemical vapor deposition method of making same. Oliver A Zitzmann, ATMI, November 21, 2002: US20020172766-A1 (1 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


4
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low dielectric constant thin films and chemical vapor deposition method of making same. Atmi, February 17, 2005: US20050038276-A1

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


5
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Atmi, January 13, 2005: US20050006799-A1

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the stru ...


6
Thomas H Baum, Jeffrey F Roeder, Chongying Xu, Bryan C Hendrix: Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same. Advanced Technology Materials, Robert A McLauchlan III, ATMI, February 7, 2002: US20020015790-A1 (2 worldwide citation)

Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant () thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor com ...


7
Peter C Van Buskirk, Jeffrey F Roeder, Steven M Bilodeau, Michael W Russell, Stephen T Johnston, Daniel J Vestyck, Thomas H Baum: Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material. Advanced Technology Materials, Robert A McLauchlan III, ATMI, February 7, 2002: US20020014644-A1 (1 worldwide citation)

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-fie ...


8
Luping Wang, Terry A Tabler, James A Dietz: Fluid distribution system and process, and semiconductor fabrication facility utilizing same. Advanced Technology Materials, Robert A McLauchlan, ATMI, January 24, 2002: US20020007849-A1 (1 worldwide citation)

A fluid distribution system for supplying a gas to a process facility such as a semiconductor manufacturing plant. The system includes a main fluid supply vessel coupled by flow circuitry to a local sorbent-containing supply vessel from which fluid, e.g., low pressure compressed gas, is dispensed to ...


9
Frank Dimeo, Philip S H Chen, Jeffrey W Neuner, James Welch, Michele Stawasz, Thomas H Baum, Mackenzie E King, Ing Shin Chen, Jeffrey F Roeder: Apparatus and process for sensing fluoro species in semiconductor processing systems. Atmi, April 22, 2004: US20040074285-A1 (1 worldwide citation)

A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based de ...


10
W Karl Olander, Matthew B Donatucci, Luping Wang, Michael J Wodjenski: Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases. Atmi, December 11, 2003: US20030226588-A1 (1 worldwide citation)

Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatm ...