1
Jeno Tihanyi, Helmut Strack, Heinrich Geiger: Field effect-controlled semiconductor component. Siemens Aktiengesellschaft, Irwin Ostroff, Arthur J Torsiglieri, February 6, 2001: US06184555 (206 worldwide citation)

The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-drain load path, in the semiconductor body, i.e ...


2
Ingemar Cox, John J Leonard, Hugh Durrant Whyte: Navigation system for a mobile robot. NEC Research Institute, Arthur J Torsiglieri, Philip J Feig, November 8, 1994: US05363305 (145 worldwide citation)

A navigation system for a mobile autonomous robot that includes apparatus for creating and maintaining a map of an environment the mobile autonomous robot is to traverse including provision for storing in a map at an assigned location features representative of geometric beacons located in the envir ...


3
John P Lewis, Maximillian A Ott, Ingemar J Cox: Videoconference system using a virtual camera image. NEC USA, NEC Research Institute, Arthur J Torsiglieri, Philip J Feig, October 25, 1994: US05359362 (142 worldwide citation)

A teleconferencing video system uses two cameras at each station symmetrically positioned on opposite sides of the optical axis between the speaker and the monitor used to produce an image of the listener. The two cameras are used to provide from the two images observed by the cameras a virtual imag ...


4
Eric H Lenz, Robert D Dible: Plasma etching apparatus utilizing plasma confinement. Lam Research Corporation, Irwin Ostroff, Arthur J Torsiglieri, July 9, 1996: US05534751 (122 worldwide citation)

Plasma etching apparatus includes a stack of quartz rings that are spaced apart to form slots therebetween and that are positioned to surround an interaction space between two electrodes of the apparatus where a plasma is formed during operation of the apparatus. The dimensions of the slots are chos ...


5
Ralph J Jaccodine, John A Michejda: Silicon integrated circuits. Bell Telephone Laboratories Incorporated, Arthur J Torsiglieri, October 5, 1982: US04353086 (89 worldwide citation)

A dynamic random access memory in which individual cells, including an access transistor and a storage capacitor, are formed in mesas formed on a silicon chip. The access transistor of the cell is formed on the top surface of the mesa and one plate of the storage capacitor of the cell is formed by t ...


6
Thomas Laska, Franz Auerbach, Heinrich Brunner, Alfred Porst, Jenoe Tihanyi, Gerhard Miller: Bipolar transistor which can be controlled by field effect and method for producing the same. Siemens Aktiengesellschaft, Irwin Ostroff, Arthur J Torsiglieri, October 30, 2001: US06309920 (75 worldwide citation)

A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the s ...


7
Paul Nance, Wolfgang Werner: Process for producing an epitaxial layer with laterally varying doping. Siemens Aktiengesellschaft, Irwin Ostroff, Arthur J Torsiglieri, January 9, 2001: US06171935 (73 worldwide citation)

A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are ...


8
Louis C Parrillo, George W Reutlinger, Li Kong Wang: Process for forming complementary integrated circuit devices. Bell Telephone Laboratories Incorporated, Arthur J Torsiglieri, March 13, 1984: US04435895 (62 worldwide citation)

A process for forming chanstops in complementary transistor integrated circuit devices which involves only a single extra masking step yet permits close control of the doping in the chanstops. The process is advantageously used starting with a twin-tub structure for forming CMOS integrated circuit d ...


9
Bhaskar Sengupta, Shyamal Chowdhury: Threshold-based load balancing in ATM switches with parallel switch planes related applications. NEC USA, Arthur J Torsiglieri, October 11, 1994: US05355372 (61 worldwide citation)

An asynchronous transfer mode switching system uses a parallel array of switching planes, distributors for distributing cells between the switching planes, and resequencers for collecting the cells after they have been switched. To balance the loads in the output buffers of the switching planes, eac ...


10
Ronald P Cenker, Frank J Procyk: Memory with redundant rows and columns. Bell Telephone Laboratories Incorporated, Arthur J Torsiglieri, October 14, 1980: US04228528 (61 worldwide citation)

A memory is provided with standard rows and columns and spare rows and columns for substitution for standard rows and columns found to have defective cells. Each of the decoders associated with a standard row and/or column includes provision for being disconnected if found to be associated with a de ...