1
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, August 3, 2010: US07768055 (10 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


2
Eb Eshun
Douglas D Coolbaugh, Hanyi Ding, Ebenezer E Eshun, Michael D Gordon, Zhong Xiang He, Anthony K Stamper: Integrated parallel plate capacitors. International Business Machines Corporation, Anthony J Canale, January 12, 2010: US07645675 (6 worldwide citation)

A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielec ...


3
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, October 16, 2007: US07282404 (6 worldwide citation)

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...


4
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated BEOL thin film resistor. International Business Machines Corporation, Anthony J Canale, March 8, 2011: US07902629 (5 worldwide citation)

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


5
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, February 9, 2010: US07659176 (5 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


6
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb & Rahman, Anthony J Canale, November 27, 2007: US07301752 (5 worldwide citation)

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


7
Eb Eshun
Ebenezer E Eshun, Steven H Voldman: High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, May 24, 2011: US07949983 (4 worldwide citation)

A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected in parallel to provide for high cur ...


8
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Joseph F Shepard Jr, Kenneth J Stein, Kunal Vaed: Prevention of Ta2O5 mim cap shorting in the beol anneal cycles. International Business Machines Corporation, Scully Scott Murphy & Presser, Anthony J Canale Esq, September 6, 2005: US06940117 (4 worldwide citation)

The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passi ...


9
Eb Eshun
Ebenezer E Eshun: Thin-film resistor and method of manufacturing the same. International Business Machines Corporation, Anthony J Canale, December 5, 2006: US07145218 (4 worldwide citation)

The invention relates to integration of a thin-film resistor in a wiring level, such as, for example, an aluminum back-end-of-line (BEOL) technology. The thin-film resistor is formed in a wiring level on, for example, an upper surface of a dielectric layer. The thin-film resistor includes end portio ...


10
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, March 30, 2010: US07687867 (3 worldwide citation)

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...