1
Jin H An: DRAM having bidirectional global bit lines. Goldstar Electron, Alan R Loudermilk, November 22, 1994: US05367488 (136 worldwide citation)

A DRAM having bidirectional global bit lines is defined such that local bit lines connected to corresponding memory cells and separative global bit lines connected to the local bit lines are commonly connected to local bit lines so as to read data stored in the cells or write data to the cells in a ...


2
Tom Long, Mohamed Sabri, J Lynn Saunders: Contact device for making connection to an electronic circuit device. Microconnect, Alan R Loudermilk, April 15, 1997: US05621333 (88 worldwide citation)

A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positioned so that the plane of the first contact elem ...


3
Jong Moon Choi, Jong Kwan Kim: Method of making a thin film transistor. Goldstar Electron Company, Alan R Loudermilk, February 10, 1998: US05716879 (79 worldwide citation)

A structure and fabricating method of a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes: an insulation substrate; a gate electrode formed on the insulation substrate; a gate insulation film formed on the gate electrode and on the insulation ...


4
Tommy Long, Mohamed Sabri, J Lynn Saunders: Method and device for making connection. Microconnect, Alan R Loudermilk, April 4, 2000: US06046599 (65 worldwide citation)

A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positioned so that the plane of the first contact elem ...


5
Shinichi Yoshioka, Fumio Arakawa, Hiroshi Yajima, Yugo Kashiwagi: Data processor and method utilizing coded no-operation instructions. Hitachi, Alan R Loudermilk, May 7, 1996: US05515519 (65 worldwide citation)

A compiler incorporates obtained information for controlling the data-processor hardware, such as the position of the branch destination of a branch instruction and the used states of registers into object codes (NOP instruction) including a no-operation instruction code to post it to the data proce ...


6
Tom Long, Mohamed Sabri, J Lynn Saunders: Contact device for making connection to an electronic circuit device. Microconnect, Alan R Loudermilk, July 18, 2000: US06091256 (59 worldwide citation)

A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positioned so that the plane of the first contact elem ...


7
Young K Jun, Sa K Ra, Dong W Kim, Hyun H Seo, Sung C Kim, Jun K Kim: Methods of patterning and manufacturing semiconductor devices. GoldStar Electron, Alan R Loudermilk, October 26, 1993: US05256587 (59 worldwide citation)

Methods of hyperfine patterning and manufacturing semiconductor devices. Steps in accordance with the present invention include coating a hemisphere particle layer having hills and valleys on a layer to be etched, the hemisphere particle layer having an etch selectivity higher than that of the first ...


8
Go Hee Choi: Internal voltage generator for semiconductor device. LG Semicon, Alan R Loudermilk, October 1, 1996: US05561385 (58 worldwide citation)

An internal voltage generator for a semiconductor device, for generating an internal voltage within the device which may include: a charge pump generating a DC voltage by rectifying clock signals; a variable frequency oscillator generating variable oscillation frequency clock signals in accordance w ...


9
Young Kyoo Han: Process for formation of an isolating layer for a semiconductor device. Goldstar Electron, Alan R Loudermilk, October 10, 1995: US05457067 (51 worldwide citation)

A process for formation of an isolating layer for a semiconductor device is disclosed. During formation of a field isolating layer, a pad oxide layer is formed which is intended to buffer the difference of the thermal expansion rates between the silicon substrate and a nitride layer. First and secon ...


10
Young Kwon Jun: Method of making memory cell capacitor. Goldstar Electron, Alan R Loudermilk, August 30, 1994: US05342800 (50 worldwide citation)

A method for making a memory cell capacitor is disclosed. Steps in accordance with present invention are: (1) forming a capacitor node contact hole after making necessary elements in a semiconductor substrate by depositing an insulation layer and etching a predetermined portion of the insulating lay ...