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Yuniarto Widjaja: Memory cells, memory cell arrays, methods of using and methods of making. Zeno Semiconductor, Alan W Cannon, June 5, 2012: US08194451 (96 worldwide citation)

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a se ...


2
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality and method of operating. ZENO Semiconductor, Alan W Cannon, April 17, 2012: US08159878 (96 worldwide citation)

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor memory cell includes a fin structure extending from a substrate, the fin structure including a floating substrate region having a first conductivity type configured to store data as volatile me ...


3
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality and method of operating. Zeno Semiconductor, Alan W Cannon, Law Office of Alan W Cannon, November 15, 2011: US08059459 (95 worldwide citation)

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping latter ...


4
Yuniarto Widjaja: Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating. ZENO Semiconductor, Alan W Cannon, September 6, 2011: US08014200 (95 worldwide citation)

A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A semiconductor memory cell includes a substrate having a first conductivity type; a first region embedded ...


5
Yuniarto Widjaja: Semiconductor memory having both volatile and non-volatile functionality and method of operating. Zeno Semiconductor, Alan W Cannon, October 23, 2012: US08294193 (94 worldwide citation)

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor memory cell includes a fin structure extending from a substrate, the fin structure including a floating substrate region having a first conductivity type configured to store data as volatile me ...


6
Yuniarto Widjaja, Zvi Or Bach: Method of maintaining the state of semiconductor memory having electrically floating body transistor. Zeno Semiconductor, Alan W Cannon, June 26, 2012: US08208302 (93 worldwide citation)

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and a ...


7
Yuniarto Widjaja, Zvi Or Bach: Semiconductor memory having electrically floating body transistor. Zeno Semiconductor, Alan W Cannon, May 8, 2012: US08174886 (92 worldwide citation)

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from sa ...


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Yuniarto Widjaja, Zvi Or Bach: Semiconductor memory having electrically floating body transistor. ZENO Semiconductor, Alan W Cannon, March 6, 2012: US08130548 (92 worldwide citation)

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from sa ...


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Yuniarto Widjaja: Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle. Zeno Semiconductor, Alan W Cannon, Law Office of Alan W Cannon, December 13, 2011: US08077536 (89 worldwide citation)

A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having ...


10
Yuniarto Widjaja, Zvi Or Bach: Method of maintaining the state of semiconductor memory having electrically floating body transistor. Zeno Semiconductor, Alan W Cannon, March 6, 2012: US08130547 (86 worldwide citation)

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and a ...