1
Yasuo Okuno: Light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 3, 1981: US04298869 (396 worldwide citation)

A plurality of light-emitting diodes are connected in series to elevate the working voltage. A plurality of said series connection are connected in parallel to maintain display even upon a disconnection accident. The total number of light-emitting diodes provides a bright and failure-safe colored li ...


2
Jun ichi Nishizawa, Yasuo Okuno, Keishiro Takahashi: Light-responsive light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, May 11, 1982: US04329625 (276 worldwide citation)

A light-responsive light-emitting diode display comprises a light-emitting diode circuit including a series connection of light-emitting diodes and a light-responsive current-controlling circuit connected in series to said light-emitting diode circuit for supplying a current thereto in correspondenc ...


3
Jun ichi Nishizawa, Tadahiro Ohmi: Short channel MOSFET with buried anti-punch through region. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 24, 1995: US05384476 (113 worldwide citation)

A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further incl ...


4
Junichi Nishizawa: Dry etching method. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 11, 1980: US04233109 (72 worldwide citation)

A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high vacuum, and an etching gas is introduced into ...


5
Jun ichi Nishizawa, Toru Kurabayashi: Method of manufacturing a static induction field-effect transistor. Research Development Corp of Japan, Jun ichi Nishizawa, Zaidan Hojin Handotai Kenkyu Shinkokai, Fish & Richardson, March 22, 1994: US05296403 (58 worldwide citation)

A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epita ...


6
Jun ichi Nishizawa: Enhancement mode JFET dynamic memory. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, February 28, 1984: US04434433 (41 worldwide citation)

A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since ...


7
Jun ichi Nishizawa: Field effect transistor with reduced series resistance. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, September 19, 1978: US04115793 (31 worldwide citation)

A field effect transistor having an additional highly doped source region contiguous to the source region and protruding into the channel having a shape approximately conforming to the shape of the depletion layer and almost contiguous with the depletion layer in a desired operative state, thereby r ...


8
Jun ichi Nishizawa: High-speed and high-density semiconductor memory. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, September 15, 1998: US05808328 (28 worldwide citation)

A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since ...


9
Jun ichi Nishizawa, Tadahiro Ohmi, Nobuo Takeda: Static induction transistor and semiconductor integrated circuit using hetero-junction. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 20, 1984: US04484207 (25 worldwide citation)

A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap bro ...


10
Jun ichi Nishizawa: Semiconductor device. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, September 13, 1983: US04404575 (24 worldwide citation)

A semiconductor device which, due to a feedback current flowing through a resistance present between the gate region and a primary current path channel region, exhibits a very steeply rising drain current versus voltage characteristic and has a very small resistance during conduction.