1
Thomas J Magee, John F Osborne, Peter Gildea, Charles H Leung: Laser planarization of nonrefractory metal during integrated circuit fabrication. XMR, William C Milks III, July 19, 1988: US04758533 (103 worldwide citation)

Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening diele ...


2
Theodore S Fahlen, Sheldon B Hutchison, Timothy McNulty: Optical beam integration system. XMR, Townsend and Townsend, March 29, 1988: US04733944 (97 worldwide citation)

An improved optical beam integration system for homogenizing a nonuniform radiant energy beam having a nonuniform beam intensity profile characteristic. The optical beam integration system comprises a first crossed lenticular cylindrical lens structure, a second crossed lenticular cylindrical lens s ...


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John L Miller: Excimer laser with improved window mount. XMR, Skjerven Morrill MacPherson Franklin & Friel, May 30, 2000: US06069909 (3 worldwide citation)

An improved excimer laser is disclosed. In one embodiment, the laser includes laser beam generating circuitry operable to generate a laser beam and a vessel enclosing the laser beam generating circuitry. The vessel contains a volume of gas conducive to the formation of the laser beam by the laser be ...


5
William J Schaffer, Jenn Y Liu: Method and system for nondestructive layer defect detection. XMR, Alan H MacPherson, Daniel P Stewart, Skjerven Morrill MacPherson Franklin & Friel, August 15, 2000: US06103539 (3 worldwide citation)

A method for nondestructive layer defect detection includes projecting radiation such as a laser beam on a surface of the layer. The surface of the layer is heated by the projected radiation so as to melt at least a portion of the layer. An impurity contained in a defect is heated by the projected r ...


6
Magee Thomas J, Osborne John F, Gildea Peter, Leung Charles H: Laser planarization of nonrefractory metal during integrated circuit fabrication.. Xmr, March 29, 1989: EP0309209-A1 (2 worldwide citation)

Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening diele ...


7
Fortin Michael A, Dang Theodore H: Improved optical beam integration system. Xmr, HETHERINGTON Michael, January 5, 1995: WO/1995/000865

An optical beam homogenizer has been improved to emphasize a dual axis, high aspect ratio spot sizing capability. The optical system alters the aspect ratio of the beam by moving three of the four lenticular arrays (12, 14, 16, 18) within the homogenizer. The integrity of dimensional control is main ...


8
Chen Sheau Sheng, Dang Theodore Huu, Sun Hongye: Method for back-side photo-induced ablation for making a color filter, or the like. Xmr, HETHERINGTON Michael, May 18, 1995: WO/1995/013566

A method of back-side photo-induced ablation, in which a laser is directed through a mask at the back side of a light-transmissive substrate, and the ablated areas are then filled with a filling material. This technique may be used as a method of making color filters, by repeatedly ablating differen ...