1
Erwin Meinders
Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P: Electric device with phase change material and parallel heater. Koninklijke Philips Electronics, Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057676 (12 worldwide citation)

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


2
Erwin Meinders
Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R: Electric device comprising a layer of phase change material and method of manufacturing the same. Koninklijke Philips Electronics, Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057618 (4 worldwide citation)

The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistan ...


3
Erwin Meinders
Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P: Electric device comprising phase change material. Koninklijke Philips Electronics, Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P, ELEVELD Koop J, October 6, 2005: WO/2005/093839 (3 worldwide citation)

The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resisti ...


4
Tuyls Pim T, Kevenaar Thomas A M, de, Jongh Petra E, Wolters Robertus A M: Semiconductor device, method of authentifying and system. Koninklijke Philips Electronics, Tuyls Pim T, Kevenaar Thomas A M, de, Jongh Petra E, Wolters Robertus A M, ELEVELD Koop J, December 2, 2004: WO/2004/105125 (12 worldwide citation)

The semiconductor device (11) of the invention comprises a circuit and a protecting structure (50). It is provided with a first and a second security element (12A, 12B) and with an input and an output (14, 15). The security elements (12A, 12B) have a first and a second impedance, respectively, which ...


5
In T, Zandt Michael A A, Lankhorst Martijn H R, Wolters Robertus A M, Kwinten Hans: Fabrication of phase-change resistor using a backend process. Nxp, In T, Zandt Michael A A, Lankhorst Martijn H R, Wolters Robertus A M, Kwinten Hans, PENNINGS Johannes, August 3, 2006: WO/2006/079952 (7 worldwide citation)

A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure (210, 215) surrounded by the conductive electrode portions (200, 24 ...


6
Zieren Victor, Wolters Robertus A M: Magnetic field sensor. Nxp, Zieren Victor, Wolters Robertus A M, WHITE Andrew G, April 23, 2009: WO/2009/050673 (7 worldwide citation)

The invention relates to a magnetic field sensor comprising a substrate having a first side (S1). The substrate comprises at the first side (S1) a silicon comprising semiconductor layer (P-SUB) which comprises a buried N-well (DNW). A bipolar transistor having an emitter region (PE+, NE+), a base re ...


7
Tuyls Pim T, Skoric Boris, Maubach Stefan J, Wolters Robertus A M: Method, apparatus and system for verifying authenticity of an object. Koninklijke Philips Electronics, Tuyls Pim T, Skoric Boris, Maubach Stefan J, Wolters Robertus A M, GROENENDAAL Antonius W M, January 18, 2007: WO/2007/007229 (5 worldwide citation)

The invention relates to a method for proving authenticity of a prover PRV to a verifier VER, the method comprising generating a secret S using a physical token by the prover PRV. Obtaining a public value PV by the verifier, where the public value PV has been derived from the secret S using a functi ...


8
Bakkers Erik P A M, Wolters Robertus A M, Klootwijk Johan H: Electric device with vertical component. Koninklijke Philips Electronics, Bakkers Erik P A M, Wolters Robertus A M, Klootwijk Johan H, ELEVELD Koop J, December 8, 2005: WO/2005/117131 (4 worldwide citation)

A method of providing an electric device with a vertical component and the device itself are disclosed. The electric device may be a transistor device, such as a FET device, with a vertical channel, such as a gate around transistor, or double-gate transistor. First an elongate structure, such as a n ...


9
Bakkers Erik P A M, Wolters Robertus A M, Klootwijk Johan H: Semiconductor device comprising a heterojunction. Koninklijke Philips Electronics, Bakkers Erik P A M, Wolters Robertus A M, Klootwijk Johan H, ELEVELD Koop J, July 14, 2005: WO/2005/064664 (4 worldwide citation)

A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor ma ...


10
Lankhorst Martijn H R, Van, Pieterson Liesbeth, Wolters Robertus A M, Meinders Erwin R: Electric device comprising phase change material. Koninklijke Philips Electronics, Lankhorst Martijn H R, Van, Pieterson Liesbeth, Wolters Robertus A M, Meinders Erwin R, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057684 (3 worldwide citation)

The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whether the phase change material is in the first phase or the sec ...