1
Erwin Meinders
Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P: Electric device with phase change material and parallel heater. Koninklijke Philips Electronics, Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057676 (12 worldwide citation)

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


2
Erwin Meinders
Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R: Electric device comprising a layer of phase change material and method of manufacturing the same. Koninklijke Philips Electronics, Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057618 (4 worldwide citation)

The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistan ...


3
Erwin Meinders
Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P: Electric device comprising phase change material. Koninklijke Philips Electronics, Lankhorst Martijn H R, Meinders Erwin R, Wolters Robertus A M, Widdershoven Franciscus P, ELEVELD Koop J, October 6, 2005: WO/2005/093839 (3 worldwide citation)

The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resisti ...


4
Woerlee Pierre H, Widdershoven Franciscus P, Van, Acht Victor M G, Ikkink Teunis J, Lambert Nicolaas, Marsman Albert W: Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor. Koninklijke Philips Electronics, Woerlee Pierre H, Widdershoven Franciscus P, Van, Acht Victor M G, Ikkink Teunis J, Lambert Nicolaas, Marsman Albert W, DE JONG Durk J, December 29, 2005: WO/2005/124787 (59 worldwide citation)

The present invention relates to an electrical device (Fig. 6) having a programmable resistor (PR) connected in series to a punch-through diode (S). The invention also relates to a method of manufacturing such an electrical device. The method comprises the steps of: providing a stack comprising a fi ...


5
Widdershoven Franciscus P, Van, Duuren Michiel J: Self-aligned 2-bit double poly cmp flash memory cell. Koninklijke Philips Electronics, Widdershoven Franciscus P, Van, Duuren Michiel J, DUIJVESTIJN Adrianus J, May 6, 2004: WO/2004/038728 (1 worldwide citation)

Fabrication of a memory cell, the cell including a first floating gate stack (A), a second floating gate stack (B) and an intermediate access gate (AG), the floating gate stacks (A, B) including a first gate oxide (4), a floating gate (FG), a control gate (CG; CGl, CGu), an interpoly dielectric laye ...


6
Meftah Mohammed, Widdershoven Franciscus P: Electrochemical sensor device, method of manufacturing the same. Koninklijke Philips Electronics, Meftah Mohammed, Widdershoven Franciscus P, SCHOUTEN Marcus M, June 19, 2008: WO/2008/072153 (1 worldwide citation)

An electrochemical sensor device (100) for analysing a sample, the device (100) comprising an electronic chip (101) comprising a sensor portion (102) being sensitive for particles of the sample, a carrier element (103, 104) bonded to the electronic chip (101) to define a fluidic path together with t ...


7
Van, Noort Wibo D, Widdershoven Franciscus P, Surdeanu Radu: Method of fabricating a dual-gate fet. Nxp, Van, Noort Wibo D, Widdershoven Franciscus P, Surdeanu Radu, PENNINGS Johannes, August 3, 2006: WO/2006/079964 (1 worldwide citation)

The invention provides a method of fabricating an extremely short-length dual-gate FET, using conventional semiconductor processing techniques, with extremely small and reproducible fins with a pitch and a width that are both smaller than can be obtained with photolithographic techniques. On a protr ...


8
Slotboom Michiel, Widdershoven Franciscus P: Method of manufacturing a semiconductor non−volatile memory. Koninklijke Philips Electronics, Slotboom Michiel, Widdershoven Franciscus P, DUIJVESTIJN Adrianus J, February 20, 2003: WO/2003/015152

Method of manufacturing a semiconductor device comprising a semiconductor body (1) which is provided at a surface (2) with a non−volatile memory comprising a memory cell with a gate structure (4) with an access gate (19) and a gate structure (3) with a control gate (5) and a charge storage region si ...


9
Ditewig Anthonie M H, Widdershoven Franciscus P, Cuppens Roger: A device and method to read a 2-transistor flash memory cell. Koninklijke Philips Electronics, Ditewig Anthonie M H, Widdershoven Franciscus P, Cuppens Roger, DUIJVESTIJN Adrianus J, June 19, 2003: WO/2003/050813

The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells. A method of reading a 2-transistor flash memory cell 1 is provided. The memory cell 1 comprises a storage transistor 2 with a st ...


10
Van, Schaijk Robertus T F, Widdershoven Franciscus P, Slotboom Michiel, Wils Nicole A H F: Method of forming semiconductor device with sidewall access gate. Koninklijke Philips Electronics, Van, Schaijk Robertus T F, Widdershoven Franciscus P, Slotboom Michiel, Wils Nicole A H F, DUIJVESTIJN Adrianus J, December 4, 2003: WO/2003/100834

The present invention provides for a method of forming a semiconductor device with an access or select gate including forming a stacked gate structure (12) with an isolation cap (22) thereon on a substrate (16) and with sidewalls of the stack being isolated, characterized by the steps of forming a c ...