1
Ingolf Lampert, Christa Gratzl: Process for the wet-chemical surface treatment of semiconductor wafers. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Collard & Roe, January 26, 1993: US05181985 (83 worldwide citation)

A process for the wet-chemical surface treatment of semiconductor wafers in which aqueous phases containing one or more chemically active substances in solution act on the wafer surfaces, consisting of spraying a water mist over the wafer surfaces and then introducing chemically active substances in ...


2
Walter Frank, Albert Pemwieser, Gerhard Spatzier: Apparatus and method of automatically separating stacked wafers. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Collard & Roe, May 25, 1993: US05213451 (58 worldwide citation)

The separation of thin disk-type workpieces from a stack has, as a rule, hitherto been carried out by hand. An apparatus and a corresponding method are now provided which make it possible to lift the wafer off the stack without mechanical contact, and also to convey the separated wafers to the tray ...


3
Hans Kramer, Helmuth Kirschner: Process for evening out the amount of material removed from discs in polishing. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Allison C Collard, Thomas M Galgano, June 2, 1981: US04270316 (47 worldwide citation)

In conventional polishing machines, uneven transmission of pressure causes ifferent degrees of abrasion of the polished discs which results in different thicknesses over one disc and also with respect to other discs in one polishing batch. This problem is solved according to the invention by the pro ...


4
Helene Prigge, Robert Rurlander, Harald Hoffman, Hans Peter Bortner: Process for removing gaseous contaminating compounds from carrier gases containing halosilane compounds. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Collard Roe & Galgano, September 24, 1991: US05051117 (42 worldwide citation)

A process for removing contaminants, particularly dopant, from halosilane-containing carrier gases, such as those which are produced in the production of high-purity silicon. The process of the invention is perferably carried out with aid of zeolites which has a low proportion of aluminum and are us ...


5
Werner Zulehner: Device and process for pulling high-purity semiconductor rods from a melt. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Allison C Collard, Thomas M Galgano, May 18, 1982: US04330362 (42 worldwide citation)

In the crucible pulling of silicon according to the Czochralski technique, ilicon monoxide forms as a result of the silicon melt reacting with the quartz crucible containing the melt, and evaporates and deposits in the form of solid particles on the upper edge of the crucible, on the monocrystalline ...


6
Rudolf Griesshammer: Process for cleaning semi-conductor discs. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Allison C Collard, Thomas M Galgano, May 29, 1979: US04156619 (40 worldwide citation)

Semi-conductor discs are cleaned, after being subjected to a polishing operation, by immersing the discs in a solution of about 30-100% by weight non-ionic or anionic surfactant and thereafter rinsing the discs with water.


7
Helene Prigge, Anton Schnegg, Gerhard Brehm, Herbert Jacob: Method of haze-free polishing for semiconductor wafers. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Collard Roe & Galgano, November 6, 1990: US04968381 (39 worldwide citation)

A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at ...


8
Bernhard Authier, Rudolf Griesshammer, Franz Koppl, Winfried Lang, Erhard Sirtl, Heinz Jorg Rath: Process for producing large-size, self-supporting plates of silicon. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Allison C Collard, Thomas M Galgano, December 26, 1978: US04131659 (33 worldwide citation)

Process for producing large-size, self-supporting plates of silicon deposd from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until ...


9
Erwin Bugl, Rudolf Griesshammer, Helmut Lorenz, Helmut Hamster, Franz Koppl: Method for the deposition of pure semiconductor material. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Allison C Collard, Thomas M Galgano, January 19, 1982: US04311545 (30 worldwide citation)

The invention relates to a method and device for making pure semiconductor aterial by thermal decomposition of compounds of the semiconductor material on suitable carrier elements. The quantity and quality of the obtained semiconductor material is increased in accordance with the invention by introd ...


10
Alois Muller, Helmut Seidl, Erich Wimmer, Laszlo Eigner: Device for transporting and positioning semiconductor wafer-type workpieces. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH, Burgess Ryan & Wayne, April 28, 1992: US05108513 (29 worldwide citation)

A device in which the wafers are moved with the aid of aqueous media, is posed for the transportation of semiconductor wafers and also for use in processes for the cleaning thereof, the device including a guideplate having a bottom plate with nozzle systems which are differently inclined in each cas ...