1
Katherina Babich
Noriaki Fukiage, Katherina Babich: Method of improving post-develop photoresist profile on a deposited dielectric film. Tokyo Electron, International Business Machines Corporation, November 3, 2009: US07611758

A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing t ...


2
Katherina Babich
Noriaki Fukiage, Katherina Babich: Method for depositing materials on a substrate. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop, May 12, 2005: US20050100682-A1

A method and apparatus for depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process, wherein for at least a part of the deposition of the TERA film, the plasma-enhanced chemical vapor deposition process emplo ...


3
Katherina Babich
Noriaki Fukiage, Katherina Babich: Method of improving post-develop photoresist profile on a deposited dielectric film. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop, May 12, 2005: US20050100683-A1

A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing t ...


4
Ho Chung Peng, Nafus Kathleen, Yoshioka Kaz, Yamaguchi Richard: Method and system for drying a substrate. Tokyo Electron, Ho Chung Peng, Nafus Kathleen, Yoshioka Kaz, Yamaguchi Richard, MAIER Gregory J, March 17, 2005: WO/2005/024325 (375 worldwide citation)

A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the ba ...


5
Kenji Ishikawa, Mitsuaki Komino, Tadashi Mitui, Teruo Iwata, Izumi Arai, Yoshifumi Tahara: Stage having electrostatic chuck and plasma processing apparatus using same. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt, January 17, 1995: US05382311 (279 worldwide citation)

A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting ...


6
Yuichiro Fujikawa, Tatsuo Hatano, Seishi Murakami: Shower head and film forming apparatus using the same. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, January 21, 1997: US05595606 (279 worldwide citation)

A shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of th ...


7
Issei Imahashi: Semiconductor processing system. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, December 9, 1997: US05695564 (213 worldwide citation)

A multi-chamber type process system for processing semiconductor wafers is constituted such that a plurality of units selected from process units, transfer units, interconnection units and in/out units are connected via gate valves. Each of the units has a casing with one or more openings through wh ...


8
Nobuo Ishii, Jiro Hata, Chishio Koshimizu, Yoshifumi Tahara, Hiroshi Nishikawa, Isei Imahashi: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, November 5, 1996: US05571366 (173 worldwide citation)

A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an i ...


9
Eiji Miyata, Masahiko Sugiyama, Masahiko Kohno, Masataka Hatta: Electric probing-test machine having a cooling system. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, January 28, 1992: US05084671 (172 worldwide citation)

An electric probing-test machine comprises a probe card having a plurality of probes contacted with chips of a semiconductor wafer and serving to apply test signal to a tester which judges whether circuits on the chips of the wafer are correct or deficient, a main chuck for holding the wafer at a te ...


10
Stanislaw Kopacz, Douglas Arthur Webb, Gerrit Jan Leusink, Rene Emile LeBlanc, Michael S Ameen, Joseph Todd Hillman, Robert F Foster, Robert Clark Rowan Jr: Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions. Tokyo Electron, Wood Herron & Evans, December 19, 2000: US06161500 (163 worldwide citation)

A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, gene ...



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