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sally liu
Chia Chung Chen, Shuo Mao Chen, Chin Wei Kuo, Sally Liu: Four-terminal gate-controlled LVBJTs. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, February 14, 2012: US08115280 (52 worldwide citation)

An integrated circuit structure includes a well region of a first conductivity type, an emitter of a second conductivity type opposite the first conductivity type over the well region, a collector of the second conductivity type over the well region and substantially encircling the emitter, and a ba ...


2
sally liu
Hsiao Tsung Yen, Chin Wei Kuo, Hsien Pin Hu, Sally Liu, Ming Fa Chen, Jhe Ching Lu: 3D inductor and transformer. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, June 25, 2013: US08471358 (7 worldwide citation)

In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pat ...


3
sally liu
Hsiao Tsung Yen, Tzu Jin Yeh, Sally Liu: Method and apparatus for de-embedding on-wafer devices. Taiwan Semiconductor Manufacturing Company, Haynes and Boone, May 31, 2011: US07954080 (7 worldwide citation)

A method and system for de-embedding an on-wafer device is disclosed. The method comprises representing the intrinsic characteristics of a test structure using a set of ABCD matrix components; determining the intrinsic characteristics arising from the test structure; and using the determined intrins ...


4
sally liu
Hsiao Tsung Yen, Hsien Pin Hu, Chin Wei Kuo, Sally Liu: Through-substrate via waveguides. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, August 6, 2013: US08502338 (6 worldwide citation)

A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. ...


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sally liu
Yih Yuh Doong, Keh Jeng Chang, Yuh Jier Mii, Sally Liu, Lien Jung Hung, Victor Chih Yuan Chang: Accurate capacitance measurement for ultra large scale integrated circuits. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, August 10, 2010: US07772868 (4 worldwide citation)

Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a ta ...


8
Eugene Fitzgerald
Matthew T Currie, Anthony J Lochtefeld, Richard Hammond, Eugene A Fitzgerald: Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, August 17, 2010: US07776697 (3 worldwide citation)

Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are pre ...


9
Eugene Fitzgerald
Matthew T Currie, Anthony J Lochtefeld, Richard Hammond, Eugene A Fitzgerald: Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, December 7, 2010: US07846802 (3 worldwide citation)

Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are pre ...


10
Eugene Fitzgerald
Matthew Currie, Anthony Lochtefeld, Richard Hammond, Eugene Fitzgerald: Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, February 8, 2011: US07884353 (3 worldwide citation)

Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are pre ...



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