1
Okamoto Masahiro, Itou Shouji, Nakao Osamu, Suzuki Takanao, Okude Satoshi: (Ja) プリント配線基板及びプリント配線基板の製造方法, (En) Printed wiring board and method for manufacturing printed wiring board. Fujikura, Okamoto Masahiro, Itou Shouji, Nakao Osamu, Suzuki Takanao, Okude Satoshi, MIYOSHI Hidekazu, April 19, 2007: WO/2007/043639 (1 worldwide citation)

(EN) A printed wiring board is provided with a base material, which has at least one wiring and is composed of an adhesive insulating base material and a conductive layer formed on one plane of the insulating base material; a penetrating electrode which is connected to the conductive layer, penetrat ...


2
Yamamoto Satoshi, Hashimoto Mikio, Suzuki Takanao: (Ja) 圧力センサパッケージ及び電子部品, (En) Pressure sensor package and electronic part. Fujikura, Yamamoto Satoshi, Hashimoto Mikio, Suzuki Takanao, SHIGA Masatake, July 26, 2007: WO/2007/083748 (1 worldwide citation)

(EN) A pressure sensor package (10) includes a pressure sensor (11) and a first bump (18). The pressure sensor has at least a first conductive unit (17) having a space (13) inside a central region &agr; on one surface (first surface) of a semiconductor substrate (12), a thin-plate region above the s ...


3
Saito Akahisa, Yoshimura Kiyoshi, Suzuki Takanao, Takisada Mikimasa, Takeoka Shinji, Sakai Hiromi, Tsuchida Hidetoshi: Stabilisateur pour vesicules phospholipidiques, Stabilizer for phospholipid vesicles. Saito Akahisa, Yoshimura Kiyoshi, Suzuki Takanao, Takisada Mikimasa, Takeoka Shinji, Sakai Hiromi, Tsuchida Hidetoshi, Chiba Flour Milling Col, OGILVY RENAULT SENCRLSRL, August 10, 2004: CA2092621

An oligosaccharide lipid is provided which has 2 to 20 saccharide units, and has a hydrophobic group linked by an ether linkage to an anomer carbon on a reducing end group. A stabilizer for a phospholipid vesicle is also provided which comprises an oligosaccharide derivative having 2 to 20 saccharid ...


4
Inaba Masatoshi, Suzuki Takanao, Ominato Tadanori, Kaizu Masahiro, Kurosaka Akihito: Semiconductor package, semiconductor device, electronic device and production method for semiconductor package. Fujikura, Inaba Masatoshi, Suzuki Takanao, Ominato Tadanori, Kaizu Masahiro, Kurosaka Akihito, FUJIMAKI Masanori, December 21, 2000: WO/2000/077843

An insulation layer (3) is formed on an Si wafer (1), and a rewiring layer (2) is formed after an opening is formed in the insulation layer (3). Then, a resin layer (4) is formed on the rewiring layer (2), and it is cured and used to bond the rewiring layer (2) with Cu foils (5). Then, an annular op ...


5
Suzuki Takanao, Inaba Masatoshi, Ominato Tadanori, Kaizu Masahiro, Kurosaka Akihito, Sadakata Nobuyuki, Masumoto Mutsumi, Masumoto Kenji: Semiconductor package, semiconductor device, electronic device, and method of manufacturing semiconductor package. Fujikura, Texas Instruments Japan, Suzuki Takanao, Inaba Masatoshi, Ominato Tadanori, Kaizu Masahiro, Kurosaka Akihito, Sadakata Nobuyuki, Masumoto Mutsumi, Masumoto Kenji, FUJIMAKI Masanori, December 21, 2000: WO/2000/077844

An insulating layer (3) is formed to have an opening (3a) corresponding to an electrode pad (2). A projection (4) of resin is then formed on the insulating layer (3). A resist layer is formed to have openings corresponding to the opening (3a), the projection (4) and the area between them. A Cu-plate ...


6
Shimomura Takeshi, Yamaguchi Shuichiro, Suzuki Takanao, Oyama Noboru: Fet electrode. Terumo Kabushiki Kaisha, Shimomura Takeshi, Yamaguchi Shuichiro, Suzuki Takanao, Oyama Noboru, OHTSUKA Yasunori, June 2, 1988: WO/1988/004049

The surface of an insulating film at the gate of an ion-selective field effect transistor (ISFET) (10) is covered with a thin carbon film (4) and the surface of this film is covered further with an electrolytically polymerized 2,6-xylenol film (3). The resulting ISFET exhibits hydrogen ion selectivi ...


7
Yamaguchi Shuichiro, Suzuki Takanao, Daikuhara Norio, Shimomura Takeshi, Oyama Noboru: Ion carrier membrane and ion sensor provided with same. Terumo Kabushiki Kaisha, Yamaguchi Shuichiro, Suzuki Takanao, Daikuhara Norio, Shimomura Takeshi, Oyama Noboru, OHTSUKA Yasunori, June 16, 1988: WO/1988/004425

The ion sensor is formed by providing an oxidizing/reducing layer (5) on the surface of a conductive base (1) through electrolytic polymerization, and providing the surface of the layer (5) thus formed with an ion carrier membrane (6) containing polyvinyl chloride, a plasticizer, and an ion carrier, ...


8
Yamaguchi Shuichiro, Suzuki Takanao, Shimomura Takeshi, Oyama Noboru: Ion sensor. Terumo Kabushiki Kaisha, Yamaguchi Shuichiro, Suzuki Takanao, Shimomura Takeshi, Oyama Noboru, OHTSUKA Yasunori, January 26, 1989: WO/1989/000690

An ion sensor which is prepared by covering a conductive base (1) with a redox function layer (5) composed of an electrolytic polymer membrane of a hydroxy or amino compound having a biphenyl skeleton, or a mixture thereof, etc., and covering the surface with an ion-selective layer (4). This ion sen ...


9
Yamaguchi Shuichiro, Suzuki Takanao, Ushizawa Norihiko, Shimomura Takeshi: Ion sensor. Terumo Kabushiki Kaisha, Yamaguchi Shuichiro, Suzuki Takanao, Ushizawa Norihiko, Shimomura Takeshi, OHTSUKA Yasunori, October 6, 1988: WO/1988/007677

A carbon-containing carbon layer (3) is deposited on the surface of an electrically conductive substrate to form an electrically conductive substrate, and the surface of this carbon layer is covered with ion-sensitive films (4), (5) which generate a potential corresponding to a predetermined ion con ...


10
Yamaguchi Shuichiro, Suzuki Takanao, Shimomura Takeshi, Oyama Noboru: Ion sensor. Terumo Kabushiki Kaisha, Yamaguchi Shuichiro, Suzuki Takanao, Shimomura Takeshi, Oyama Noboru, OHTSUKA Yasunori, August 25, 1988: WO/1988/006289

An ion sensor (20) is formed by disposing a carbon coating at part on a substrate (1) on which copper wires are printed, connecting the substrate (1) and lead wires (2) with a solder (3), insulating the solder (3) with a silicone resin (4), and applying sequentially a redox function layer (11) obtai ...