1
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. Sundisk Corporation, Majestic Parsons Siebert & Hsue, December 15, 1992: US05172338 (1028 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable non-volatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading ...


2
Eliyahou Harari, Sanjay Mehrotra: Segmented column memory array. SunDisk Corporation, Majestic Parsons Siebert & Hsue, May 24, 1994: US05315541 (742 worldwide citation)

In an array of solid-state memory cells organized into rows and segmented columns and addressable by wordlines and bit lines, a memory cell within a segmented column is addressable by segment-select transistors which selectively connect the memory cell's pair of bit lines via conductive lines runnin ...


3
Daniel C Guterman, Gheorghe Samachisa, Yupin K Fong, Eliyahou Harrai: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Caserza, May 17, 1994: US05313421 (579 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


4
Jack H Yuan, Eliyahou Harari: Method of making dense flash EEprom semiconductor memory structures. SunDisk Corporation, Majestic Parsons Siebert & Hsue, December 3, 1991: US05070032 (570 worldwide citation)

An improved electrically erasable and programmable read only memory (EEprom) structure and processes of making it which results in a denser integrated circuit, improved operation and extended lifetime. In order to eliminate certain ill effects resulting from tolerances which must be allowed for regi ...


5
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash eeprom system. SunDisk Corporation, Majestic Parsons Siebert & Hsue, March 22, 1994: US05297148 (522 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


6
Jack H Yuan, Gheorghe Samachisa, Daniel C Guterman, Eliyahou Harari: Dense vertical programmable read only memory cell structure and processes for making them. SunDisk Corporation, Majestic Parsons Siebert & Hsue, August 30, 1994: US05343063 (521 worldwide citation)

A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are forme ...


7
Robert D Norman, Karl M J Lofgren, Jeffrey D Stai, Anil Gupta, Sanjay Mehrotra: Solid state memory system including plural memory chips and a serialized bus. Sundisk Corporation, Majestic Parsons Siebert & Hsue, July 4, 1995: US05430859 (450 worldwide citation)

A memory system includes an array of solid-state memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a dis ...


8
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash EEPROM system with erase sector select. Sundisk Corporation, Majestic Parsons Siebert & Hsue, May 23, 1995: US05418752 (380 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


9
Stephen Gross, Robert D Norman: Device and method for defect handling in semi-conductor memory. SunDisk Corporation, Majestic Parsons Siebert & Hsue, April 6, 1993: US05200959 (378 worldwide citation)

A solid-state memory array such as an electrically erasable programmable read only memory (EEprom) or Flash EEprom array is used to store sequential data in a prescribed order. The memory includes a first information list containing addresses and defect types of previously detected defects. The defe ...


10
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. SunDisk Corporation, Majestic Parsons Siebert & Hsue, November 10, 1992: US05163021 (362 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable nonvolatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading i ...